1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

M. Owen; J. D. Bainbridge; M. F. C. Stephens; R. V. Penty; I. H. White; K. Poguntke; K. Young-Smith; M. J. Robertson

doi:10.1049/el:19981357

1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

M. Owen, J. D. Bainbridge, M. F. C. Stephens, R. V. Penty, I. H. White, K. Poguntke, K. Young-Smith, M. J. Robertson

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.

Original language	English
Pages (from-to)	1942-1943
Number of pages	2
Journal	Electronics letters
Volume	34
Issue number	20
DOIs	https://doi.org/10.1049/el:19981357
Publication status	Published - 1 Jan 1998

Keywords

Monolithic integrated circuits
Optical frequency conversion
Semiconducting indium gallium arsenide
Semiconducting indium phosphide
Semiconductor quantum wells
All optical space switching
Multiquantum well
Multiwavelength grating cavity laser
Passive wavelength router
Semiconductor lasers

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10.1049/el:19981357

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title = "1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser",

abstract = "A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.",

keywords = "Monolithic integrated circuits, Optical frequency conversion, Semiconducting indium gallium arsenide, Semiconducting indium phosphide, Semiconductor quantum wells, All optical space switching, Multiquantum well, Multiwavelength grating cavity laser, Passive wavelength router, Semiconductor lasers",

author = "M. Owen and Bainbridge, {J. D.} and Stephens, {M. F. C.} and Penty, {R. V.} and White, {I. H.} and K. Poguntke and K. Young-Smith and Robertson, {M. J.}",

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T1 - 1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

AU - Owen, M.

AU - Bainbridge, J. D.

AU - Stephens, M. F. C.

AU - Penty, R. V.

AU - White, I. H.

AU - Poguntke, K.

AU - Young-Smith, K.

AU - Robertson, M. J.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.

AB - A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.

KW - Monolithic integrated circuits

KW - Optical frequency conversion

KW - Semiconducting indium gallium arsenide

KW - Semiconducting indium phosphide

KW - Semiconductor quantum wells

KW - All optical space switching

KW - Multiquantum well

KW - Multiwavelength grating cavity laser

KW - Passive wavelength router

KW - Semiconductor lasers

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DO - 10.1049/el:19981357

M3 - Article

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EP - 1943

JO - Electronics letters

JF - Electronics letters

IS - 20

ER -

1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

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Keywords

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