202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K.A. Fedorova, M.A. Cataluna, I. Krestnikov, D. Livshits, E.U. Rafailov

Research output: Chapter in Book/Report/Conference proceedingConference publication

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.
Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Place of PublicationNew York (US)
PublisherIEEE
Pages172-173
Number of pages2
ISBN (Print)978-1-4244-5683-3
DOIs
Publication statusPublished - 2010
Event22nd IEEE International Semiconductor Laser Conference (ISLC) - Kyoto , Japan
Duration: 26 Sep 201030 Sep 2010

Conference

Conference22nd IEEE International Semiconductor Laser Conference (ISLC)
CountryJapan
CityKyoto
Period26/09/1030/09/10

Keywords

  • range

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