202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K.A. Fedorova, M.A. Cataluna, I. Krestnikov, D. Livshits, E.U. Rafailov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.
Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Place of PublicationNew York (US)
PublisherIEEE
Pages172-173
Number of pages2
ISBN (Print)978-1-4244-5683-3
DOIs
Publication statusPublished - 2010
Event22nd IEEE International Semiconductor Laser Conference (ISLC) - Kyoto , Japan
Duration: 26 Sep 201030 Sep 2010

Conference

Conference22nd IEEE International Semiconductor Laser Conference (ISLC)
CountryJapan
CityKyoto
Period26/09/1030/09/10

Fingerprint

semiconductor lasers
tuning
quantum dots
retarding
cavities
output
lasers

Keywords

  • range

Cite this

Fedorova, K. A., Cataluna, M. A., Krestnikov, I., Livshits, D., & Rafailov, E. U. (2010). 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 172-173). [WD3] New York (US): IEEE. https://doi.org/10.1109/ISLC.2010.5642655
Fedorova, K.A. ; Cataluna, M.A. ; Krestnikov, I. ; Livshits, D. ; Rafailov, E.U. / 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. Conference Digest - IEEE International Semiconductor Laser Conference. New York (US) : IEEE, 2010. pp. 172-173
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abstract = "Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.",
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Fedorova, KA, Cataluna, MA, Krestnikov, I, Livshits, D & Rafailov, EU 2010, 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. in Conference Digest - IEEE International Semiconductor Laser Conference., WD3, IEEE, New York (US), pp. 172-173, 22nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto , Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642655

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. / Fedorova, K.A.; Cataluna, M.A.; Krestnikov, I.; Livshits, D.; Rafailov, E.U.

Conference Digest - IEEE International Semiconductor Laser Conference. New York (US) : IEEE, 2010. p. 172-173 WD3.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Fedorova KA, Cataluna MA, Krestnikov I, Livshits D, Rafailov EU. 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. In Conference Digest - IEEE International Semiconductor Laser Conference. New York (US): IEEE. 2010. p. 172-173. WD3 https://doi.org/10.1109/ISLC.2010.5642655