A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma

C.J. Tang, I. Abe, A.J.S. Fernandes, M.A. Neto, L.P. Gu, S. Pereira, H. Ye, X.F. Jiang, J.L. Pinto

Research output: Contribution to journalArticle

Abstract

In this work, we report high growth rate of nanocrystalline diamond (NCD) films on silicon wafers of 2 inches in diameter using a new growth regime, which employs high power and CH4/H2/N2/O2 plasma using a 5 kW MPCVD system. This is distinct from the commonly used hydrogen-poor Ar/CH4 chemistries for NCD growth. Upon rising microwave power from 2000 W to 3200 W, the growth rate of the NCD films increases from 0.3 to 3.4 μm/h, namely one order of magnitude enhancement on the growth rate was achieved at high microwave power. The morphology, grain size, microstructure, orientation or texture, and crystalline quality of the NCD samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and micro-Raman spectroscopy. The combined effect of nitrogen addition, microwave power, and temperature on NCD growth is discussed from the point view of gas phase chemistry and surface reactions.

Original languageEnglish
Pages (from-to)304-309
Number of pages6
JournalDiamond and Related Materials
Volume20
Issue number3
Early online date18 Jan 2011
DOIs
Publication statusPublished - Mar 2011

Fingerprint

Diamond
Diamond films
diamond films
Diamonds
Microwaves
Plasmas
diamonds
Surface reactions
Silicon wafers
microwaves
Crystal orientation
Raman spectroscopy
Hydrogen
Atomic force microscopy
Nitrogen
Textures
Gases
chemistry
Crystalline materials
X ray diffraction

Keywords

  • CH/H /N/O plasma
  • high growth rate
  • high-power MPCVD
  • microwave power
  • nanocrystalline diamond (NCD) films

Cite this

Tang, C. J., Abe, I., Fernandes, A. J. S., Neto, M. A., Gu, L. P., Pereira, S., ... Pinto, J. L. (2011). A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma. Diamond and Related Materials, 20(3), 304-309. https://doi.org/10.1016/j.diamond.2011.01.017
Tang, C.J. ; Abe, I. ; Fernandes, A.J.S. ; Neto, M.A. ; Gu, L.P. ; Pereira, S. ; Ye, H. ; Jiang, X.F. ; Pinto, J.L. / A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma. In: Diamond and Related Materials. 2011 ; Vol. 20, No. 3. pp. 304-309.
@article{63215bc9c28c4cc0910643a6c340d6dc,
title = "A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma",
abstract = "In this work, we report high growth rate of nanocrystalline diamond (NCD) films on silicon wafers of 2 inches in diameter using a new growth regime, which employs high power and CH4/H2/N2/O2 plasma using a 5 kW MPCVD system. This is distinct from the commonly used hydrogen-poor Ar/CH4 chemistries for NCD growth. Upon rising microwave power from 2000 W to 3200 W, the growth rate of the NCD films increases from 0.3 to 3.4 μm/h, namely one order of magnitude enhancement on the growth rate was achieved at high microwave power. The morphology, grain size, microstructure, orientation or texture, and crystalline quality of the NCD samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and micro-Raman spectroscopy. The combined effect of nitrogen addition, microwave power, and temperature on NCD growth is discussed from the point view of gas phase chemistry and surface reactions.",
keywords = "CH/H /N/O plasma, high growth rate, high-power MPCVD, microwave power, nanocrystalline diamond (NCD) films",
author = "C.J. Tang and I. Abe and A.J.S. Fernandes and M.A. Neto and L.P. Gu and S. Pereira and H. Ye and X.F. Jiang and J.L. Pinto",
year = "2011",
month = "3",
doi = "10.1016/j.diamond.2011.01.017",
language = "English",
volume = "20",
pages = "304--309",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier",
number = "3",

}

Tang, CJ, Abe, I, Fernandes, AJS, Neto, MA, Gu, LP, Pereira, S, Ye, H, Jiang, XF & Pinto, JL 2011, 'A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma', Diamond and Related Materials, vol. 20, no. 3, pp. 304-309. https://doi.org/10.1016/j.diamond.2011.01.017

A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma. / Tang, C.J.; Abe, I.; Fernandes, A.J.S.; Neto, M.A.; Gu, L.P.; Pereira, S.; Ye, H.; Jiang, X.F.; Pinto, J.L.

In: Diamond and Related Materials, Vol. 20, No. 3, 03.2011, p. 304-309.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma

AU - Tang, C.J.

AU - Abe, I.

AU - Fernandes, A.J.S.

AU - Neto, M.A.

AU - Gu, L.P.

AU - Pereira, S.

AU - Ye, H.

AU - Jiang, X.F.

AU - Pinto, J.L.

PY - 2011/3

Y1 - 2011/3

N2 - In this work, we report high growth rate of nanocrystalline diamond (NCD) films on silicon wafers of 2 inches in diameter using a new growth regime, which employs high power and CH4/H2/N2/O2 plasma using a 5 kW MPCVD system. This is distinct from the commonly used hydrogen-poor Ar/CH4 chemistries for NCD growth. Upon rising microwave power from 2000 W to 3200 W, the growth rate of the NCD films increases from 0.3 to 3.4 μm/h, namely one order of magnitude enhancement on the growth rate was achieved at high microwave power. The morphology, grain size, microstructure, orientation or texture, and crystalline quality of the NCD samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and micro-Raman spectroscopy. The combined effect of nitrogen addition, microwave power, and temperature on NCD growth is discussed from the point view of gas phase chemistry and surface reactions.

AB - In this work, we report high growth rate of nanocrystalline diamond (NCD) films on silicon wafers of 2 inches in diameter using a new growth regime, which employs high power and CH4/H2/N2/O2 plasma using a 5 kW MPCVD system. This is distinct from the commonly used hydrogen-poor Ar/CH4 chemistries for NCD growth. Upon rising microwave power from 2000 W to 3200 W, the growth rate of the NCD films increases from 0.3 to 3.4 μm/h, namely one order of magnitude enhancement on the growth rate was achieved at high microwave power. The morphology, grain size, microstructure, orientation or texture, and crystalline quality of the NCD samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and micro-Raman spectroscopy. The combined effect of nitrogen addition, microwave power, and temperature on NCD growth is discussed from the point view of gas phase chemistry and surface reactions.

KW - CH/H /N/O plasma

KW - high growth rate

KW - high-power MPCVD

KW - microwave power

KW - nanocrystalline diamond (NCD) films

UR - http://www.scopus.com/inward/record.url?scp=79551567724&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2011.01.017

DO - 10.1016/j.diamond.2011.01.017

M3 - Article

AN - SCOPUS:79551567724

VL - 20

SP - 304

EP - 309

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3

ER -