Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region

V. A. Astapenko; Egor Manuylovich; Sergey  Sakhno; Egor  Khramov; Andrey  Yakovets

doi:10.1134/S1990793118020033

Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region

V. A. Astapenko
, Egor Manuylovich
, Sergey Sakhno
, Egor Khramov
, Andrey Yakovets

Aston Institute of Photonic Technologies (AiPT)

Moscow Institute of Physics and Technology

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.

Original language	English
Pages (from-to)	325–329
Journal	Russian Journal of Physical Chemistry B
Volume	12
DOIs	https://doi.org/10.1134/S1990793118020033
Publication status	Published - 29 May 2018

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title = "Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region",

abstract = "The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.",

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T1 - Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region

AU - Astapenko, V. A.

AU - Manuylovich, Egor

AU - Sakhno, Sergey

AU - Khramov, Egor

AU - Yakovets, Andrey

PY - 2018/5/29

Y1 - 2018/5/29

N2 - The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.

AB - The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.

UR - https://link.springer.com/article/10.1134%2FS1990793118020033

U2 - 10.1134/S1990793118020033

DO - 10.1134/S1990793118020033

M3 - Article

SN - 1990-7923

VL - 12

SP - 325

EP - 329

JO - Russian Journal of Physical Chemistry B

JF - Russian Journal of Physical Chemistry B

ER -

Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region

Abstract

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