AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Amit Yadav*, Ilya Titkov, Grigorii S. Sokolovskii, Sergey Yu Karpov, Vladislav V. Dudelev, Ksenya K. Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, Edik U. Rafailov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference publication

Abstract

Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negligible red shift of the emission wavelength is observed in the whole range of drive currents at nanosecond-range pulses with duty cycles well below 1%. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major mechanism of the LED efficiency reduction at higher pumping, dominating over the electron overflow and Auger recombination.
Original languageEnglish
Title of host publicationLight-emitting diodes
Subtitle of host publicationmaterials, devices, and applications for solid state lighting XX
EditorsHeonsu Jeon, Li-Wei Tu, Michael R. Krames, Martin Strassburg
Place of PublicationBellingham, WA (US)
PublisherSPIE
Number of pages7
ISBN (Print)9781510600034
DOIs
Publication statusPublished - 8 Mar 2016
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - , United Kingdom
Duration: 15 Feb 201628 Feb 2016

Publication series

NameSPIE proceedings
PublisherSPIE
Volume9768
ISSN (Print)0277-786X
ISSN (Electronic)2410-9045

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
CountryUnited Kingdom
Period15/02/1628/02/16

Bibliographical note

Amit Yadav; Ilya E. Titkov; Grigorii S. Sokolovskii; Sergey Y. Karpov; Vladislav V. Dudelev; Ksenya K. Soboleva; Martin Strassburg; Ines Pietzonka; Hans-Juergen Lugauer and Edik U. Rafailov; "AlGaInP red-emitting light emitting diode under extremely high pulsed pumping", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681K (March 8, 2016).

Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

DOI: http://dx.doi.org/10.1117/12.2213344

Keywords

  • AlGaInP LEDsE
  • efficiency droop
  • external quantum efficiency
  • self-heating

Fingerprint Dive into the research topics of 'AlGaInP red-emitting light emitting diode under extremely high pulsed pumping'. Together they form a unique fingerprint.

  • Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

    Zulonas, M., Titkov, I. E., Yadav, A., Fedorova, K. A., Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Meredith, W., Rafailov, E. U. & Slight, T. J., 8 Mar 2016, Light-emitting diodes: materials, devices, and applications for solid state lighting XX. Jeon, H., Tu, L-W., Krames, M. R. & Strassburg, M. (eds.). Bellingham, WA (US): SPIE, 8 p. 97680N. (SPIE proceedings; vol. 9768).

    Research output: Chapter in Book/Report/Conference proceedingConference publication

    Open Access
    File

Cite this