Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier

Nikolai B. Chichkov, Amit Yadav, Franck Joulain, Solenn Cozic, Semyon V. Smirnov, Leon Shterengas, Julian Scheuermann, Robert Weih, Johannes Koeth, Sven Höfling, Ulf Hinze, Samuel Poulain, Edik U. Rafailov

Research output: Contribution to journalArticlepeer-review


Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 μm. The laser setup consists of a GaSb-based diode laser and a single-stage Er-doped fibre amplifier. Amplification is investigated for continuous wave (CW) and ns-pulsed input signals, generated by gain-modulation of the GaSb-based seed lasers. The experimental results include the demonstration of output powers up to 0.9 W, pulse durations as short as 20 ns, and pulse repetition rates up to 1 MHz. Additionally, the amplification of commercial and custom-made GaSb-based seed lasers is compared and the impact of different fibre end-cap materials on laser performance is analysed.

Original languageEnglish
Article number1500507
Number of pages7
JournalIEEE Photonics Journal
Issue number1
Early online date19 Jan 2023
Publication statusPublished - Feb 2023

Bibliographical note

This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see

Funding: This work was supported in part by Marie Skłodowska-Curie through European Union’s Horizon 2020 Research and Innovation Programme under Grant 843801 and in part by Engineering and Physical Sciences Research Council (EPSRC) under Grant EP/R024898/1.


  • Diode lasers
  • Erbium
  • Fibre laser
  • Fluoride fibre
  • GaSb diode laser
  • Gas lasers
  • Laser beams
  • Mid-infrared
  • Nanosecond
  • Power generation
  • Power lasers
  • Pump lasers
  • Semiconductor laser
  • Semiconductor lasers


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