Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

Ksenia A. Fedorova; Maria A. Cataluna; Igor Kudryashov; Victor Khalfin; Edik U. Rafailov

doi:10.1109/LPT.2010.2051661

Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

Ksenia A. Fedorova, Maria A. Cataluna, Igor Kudryashov, Victor Khalfin, Edik U. Rafailov

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

Original language	English
Pages (from-to)	1205-1207
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	16
Early online date	7 Jun 2010
DOIs	https://doi.org/10.1109/LPT.2010.2051661
Publication status	Published - 15 Aug 2010

Keywords

quantum-well (QW) lasers
emiconductor lasers

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10.1109/LPT.2010.2051661

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abstract = "In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.",

keywords = "quantum-well (QW) lasers, emiconductor lasers",

author = "Fedorova, {Ksenia A.} and Cataluna, {Maria A.} and Igor Kudryashov and Victor Khalfin and Rafailov, {Edik U.}",

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AU - Fedorova, Ksenia A.

AU - Cataluna, Maria A.

AU - Kudryashov, Igor

AU - Khalfin, Victor

AU - Rafailov, Edik U.

PY - 2010/8/15

Y1 - 2010/8/15

N2 - In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

AB - In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

KW - quantum-well (QW) lasers

KW - emiconductor lasers

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U2 - 10.1109/LPT.2010.2051661

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

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Keywords

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