Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well

R. Mottahedeh*, D. Prescott, S.K. Haywood, David A. Pattison, P.N. Kean, Ian Bennion, M. Hopkinson, M. Pate, L. Hart

*Corresponding author for this work

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Abstract

The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)306-309
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number1
DOIs
Publication statusPublished - Jan 1998

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Keywords

  • indium compounds
  • gallium arsenide
  • III-V semiconductors
  • carrier lifetime
  • excitons
  • optical saturable absorption
  • semiconductor quantum wells
  • time resolved spectra
  • thermionic emission

Cite this

Mottahedeh, R., Prescott, D., Haywood, S. K., Pattison, D. A., Kean, P. N., Bennion, I., Hopkinson, M., Pate, M., & Hart, L. (1998). Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well. Journal of Applied Physics, 83(1), 306-309. https://doi.org/10.1063/1.366684