Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well

R. Mottahedeh*, D. Prescott, S.K. Haywood, David A. Pattison, P.N. Kean, Ian Bennion, M. Hopkinson, M. Pate, L. Hart

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)306-309
Number of pages4
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - Jan 1998


  • indium compounds
  • gallium arsenide
  • III-V semiconductors
  • carrier lifetime
  • excitons
  • optical saturable absorption
  • semiconductor quantum wells
  • time resolved spectra
  • thermionic emission


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