Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well

R. Mottahedeh, D. Prescott, S.K. Haywood, David A. Pattison, P.N. Kean, Ian Bennion, M. Hopkinson, M. Pate, L. Hart

Research output: Contribution to journalArticle

Abstract

The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

Original languageEnglish
Pages (from-to)306-309
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number1
DOIs
Publication statusPublished - Jan 1998

Fingerprint

carrier lifetime
excitons
quantum wells
saturation
thermionic emission
bleaching
escape
pumps
life (durability)
physics
probes
decay
room temperature
spectroscopy

Keywords

  • indium compounds
  • gallium arsenide
  • III-V semiconductors
  • carrier lifetime
  • excitons
  • optical saturable absorption
  • semiconductor quantum wells
  • time resolved spectra
  • thermionic emission

Cite this

Mottahedeh, R., Prescott, D., Haywood, S. K., Pattison, D. A., Kean, P. N., Bennion, I., ... Hart, L. (1998). Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well. Journal of Applied Physics, 83(1), 306-309. https://doi.org/10.1063/1.366684
Mottahedeh, R. ; Prescott, D. ; Haywood, S.K. ; Pattison, David A. ; Kean, P.N. ; Bennion, Ian ; Hopkinson, M. ; Pate, M. ; Hart, L. / Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well. In: Journal of Applied Physics. 1998 ; Vol. 83, No. 1. pp. 306-309.
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Mottahedeh, R, Prescott, D, Haywood, SK, Pattison, DA, Kean, PN, Bennion, I, Hopkinson, M, Pate, M & Hart, L 1998, 'Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well', Journal of Applied Physics, vol. 83, no. 1, pp. 306-309. https://doi.org/10.1063/1.366684

Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well. / Mottahedeh, R.; Prescott, D.; Haywood, S.K.; Pattison, David A.; Kean, P.N.; Bennion, Ian; Hopkinson, M.; Pate, M.; Hart, L.

In: Journal of Applied Physics, Vol. 83, No. 1, 01.1998, p. 306-309.

Research output: Contribution to journalArticle

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T1 - Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well

AU - Mottahedeh, R.

AU - Prescott, D.

AU - Haywood, S.K.

AU - Pattison, David A.

AU - Kean, P.N.

AU - Bennion, Ian

AU - Hopkinson, M.

AU - Pate, M.

AU - Hart, L.

PY - 1998/1

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N2 - The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

AB - The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

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KW - gallium arsenide

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KW - excitons

KW - optical saturable absorption

KW - semiconductor quantum wells

KW - time resolved spectra

KW - thermionic emission

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Mottahedeh R, Prescott D, Haywood SK, Pattison DA, Kean PN, Bennion I et al. Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well. Journal of Applied Physics. 1998 Jan;83(1):306-309. https://doi.org/10.1063/1.366684