Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas

R. Leyman, D. Carnegie, N. Bazieva, G. Molis, A. Arlauskas, A. Krotkus, S. Schulz, C. Reardon, E. Clarke, E. U. Rafailov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The THz optoelectronics field is now beginning to mature and semiconductor-based THz signal emitter/detector devices are becoming more widely implemented as analytical tools in spectroscopy and imaging1. The predominant area of development in this field has always been the photoconductive (PC) active material which forms the basis of the necessary ultrafast switching process. These materials traditionally are optically pumped using, for example, a Ti:Sapphire laser which can generate ultrashort pulses with photonic energy higher than the active material bandgap. This allows the generation of (photo)carrier pairs which are accelerated by the E-field of an integrated antenna electrode pair and then captured over ultrashort timescales (τc < 1ps) usually by defects and trapping sites throughout the active material lattice. As a defective material (such as low-temperature-grown GaAs, 'LT-GaAs') is typically used, many parameters such as carrier mobility and PC gain are greatly compromised. It has been shown previously that quantum dots (QDs) deposited within or over GaAs can enable and/or enhance the efficiency of THz signal generation2. We demonstrate here the efficient generation of THz output signals using PC THz antennas based on semiconductor structures comprised of InAs quantum dots (QDs) embedded in high quality crystalline GaAs, whereby the embedded QDs act as the ultrafast capture mechanism3.

Original languageEnglish
Title of host publication2013 IEEE Photonics Conference, IPC 2013
PublisherIEEE
Pages418-419
Number of pages2
ISBN (Print)9781457715075
DOIs
Publication statusPublished - 7 Nov 2013
Event2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, United States
Duration: 8 Sep 201312 Sep 2013

Publication series

Name2013 IEEE Photonics Conference
PublisherIEEE
ISSN (Print)1092-8081

Conference

Conference2013 26th IEEE Photonics Conference, IPC 2013
CountryUnited States
CityBellevue, WA
Period8/09/1312/09/13

Fingerprint

Semiconductor quantum dots
antennas
quantum dots
Antennas
carrier mobility
Semiconductor materials
emitters
sapphire
trapping
photonics
Carrier mobility
Ultrashort pulses
electrodes
Sapphire
output
Optoelectronic devices
Photonics
detectors
defects
pulses

Cite this

Leyman, R., Carnegie, D., Bazieva, N., Molis, G., Arlauskas, A., Krotkus, A., ... Rafailov, E. U. (2013). Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas. In 2013 IEEE Photonics Conference, IPC 2013 (pp. 418-419). [6656615] (2013 IEEE Photonics Conference). IEEE. https://doi.org/10.1109/IPCon.2013.6656615
Leyman, R. ; Carnegie, D. ; Bazieva, N. ; Molis, G. ; Arlauskas, A. ; Krotkus, A. ; Schulz, S. ; Reardon, C. ; Clarke, E. ; Rafailov, E. U. / Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas. 2013 IEEE Photonics Conference, IPC 2013. IEEE, 2013. pp. 418-419 (2013 IEEE Photonics Conference).
@inproceedings{5c903378dc514af7b12b5e6cbaed9d31,
title = "Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas",
abstract = "The THz optoelectronics field is now beginning to mature and semiconductor-based THz signal emitter/detector devices are becoming more widely implemented as analytical tools in spectroscopy and imaging1. The predominant area of development in this field has always been the photoconductive (PC) active material which forms the basis of the necessary ultrafast switching process. These materials traditionally are optically pumped using, for example, a Ti:Sapphire laser which can generate ultrashort pulses with photonic energy higher than the active material bandgap. This allows the generation of (photo)carrier pairs which are accelerated by the E-field of an integrated antenna electrode pair and then captured over ultrashort timescales (τc < 1ps) usually by defects and trapping sites throughout the active material lattice. As a defective material (such as low-temperature-grown GaAs, 'LT-GaAs') is typically used, many parameters such as carrier mobility and PC gain are greatly compromised. It has been shown previously that quantum dots (QDs) deposited within or over GaAs can enable and/or enhance the efficiency of THz signal generation2. We demonstrate here the efficient generation of THz output signals using PC THz antennas based on semiconductor structures comprised of InAs quantum dots (QDs) embedded in high quality crystalline GaAs, whereby the embedded QDs act as the ultrafast capture mechanism3.",
author = "R. Leyman and D. Carnegie and N. Bazieva and G. Molis and A. Arlauskas and A. Krotkus and S. Schulz and C. Reardon and E. Clarke and Rafailov, {E. U.}",
year = "2013",
month = "11",
day = "7",
doi = "10.1109/IPCon.2013.6656615",
language = "English",
isbn = "9781457715075",
series = "2013 IEEE Photonics Conference",
publisher = "IEEE",
pages = "418--419",
booktitle = "2013 IEEE Photonics Conference, IPC 2013",
address = "United States",

}

Leyman, R, Carnegie, D, Bazieva, N, Molis, G, Arlauskas, A, Krotkus, A, Schulz, S, Reardon, C, Clarke, E & Rafailov, EU 2013, Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas. in 2013 IEEE Photonics Conference, IPC 2013., 6656615, 2013 IEEE Photonics Conference, IEEE, pp. 418-419, 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United States, 8/09/13. https://doi.org/10.1109/IPCon.2013.6656615

Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas. / Leyman, R.; Carnegie, D.; Bazieva, N.; Molis, G.; Arlauskas, A.; Krotkus, A.; Schulz, S.; Reardon, C.; Clarke, E.; Rafailov, E. U.

2013 IEEE Photonics Conference, IPC 2013. IEEE, 2013. p. 418-419 6656615 (2013 IEEE Photonics Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

AU - Molis, G.

AU - Arlauskas, A.

AU - Krotkus, A.

AU - Schulz, S.

AU - Reardon, C.

AU - Clarke, E.

AU - Rafailov, E. U.

PY - 2013/11/7

Y1 - 2013/11/7

N2 - The THz optoelectronics field is now beginning to mature and semiconductor-based THz signal emitter/detector devices are becoming more widely implemented as analytical tools in spectroscopy and imaging1. The predominant area of development in this field has always been the photoconductive (PC) active material which forms the basis of the necessary ultrafast switching process. These materials traditionally are optically pumped using, for example, a Ti:Sapphire laser which can generate ultrashort pulses with photonic energy higher than the active material bandgap. This allows the generation of (photo)carrier pairs which are accelerated by the E-field of an integrated antenna electrode pair and then captured over ultrashort timescales (τc < 1ps) usually by defects and trapping sites throughout the active material lattice. As a defective material (such as low-temperature-grown GaAs, 'LT-GaAs') is typically used, many parameters such as carrier mobility and PC gain are greatly compromised. It has been shown previously that quantum dots (QDs) deposited within or over GaAs can enable and/or enhance the efficiency of THz signal generation2. We demonstrate here the efficient generation of THz output signals using PC THz antennas based on semiconductor structures comprised of InAs quantum dots (QDs) embedded in high quality crystalline GaAs, whereby the embedded QDs act as the ultrafast capture mechanism3.

AB - The THz optoelectronics field is now beginning to mature and semiconductor-based THz signal emitter/detector devices are becoming more widely implemented as analytical tools in spectroscopy and imaging1. The predominant area of development in this field has always been the photoconductive (PC) active material which forms the basis of the necessary ultrafast switching process. These materials traditionally are optically pumped using, for example, a Ti:Sapphire laser which can generate ultrashort pulses with photonic energy higher than the active material bandgap. This allows the generation of (photo)carrier pairs which are accelerated by the E-field of an integrated antenna electrode pair and then captured over ultrashort timescales (τc < 1ps) usually by defects and trapping sites throughout the active material lattice. As a defective material (such as low-temperature-grown GaAs, 'LT-GaAs') is typically used, many parameters such as carrier mobility and PC gain are greatly compromised. It has been shown previously that quantum dots (QDs) deposited within or over GaAs can enable and/or enhance the efficiency of THz signal generation2. We demonstrate here the efficient generation of THz output signals using PC THz antennas based on semiconductor structures comprised of InAs quantum dots (QDs) embedded in high quality crystalline GaAs, whereby the embedded QDs act as the ultrafast capture mechanism3.

UR - http://www.scopus.com/inward/record.url?scp=84892759175&partnerID=8YFLogxK

UR - https://ieeexplore.ieee.org/document/6656615

U2 - 10.1109/IPCon.2013.6656615

DO - 10.1109/IPCon.2013.6656615

M3 - Conference contribution

AN - SCOPUS:84892759175

SN - 9781457715075

T3 - 2013 IEEE Photonics Conference

SP - 418

EP - 419

BT - 2013 IEEE Photonics Conference, IPC 2013

PB - IEEE

ER -

Leyman R, Carnegie D, Bazieva N, Molis G, Arlauskas A, Krotkus A et al. Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas. In 2013 IEEE Photonics Conference, IPC 2013. IEEE. 2013. p. 418-419. 6656615. (2013 IEEE Photonics Conference). https://doi.org/10.1109/IPCon.2013.6656615