Characterising the surface roughness of AFM grown SiO2 on Si

D. Hill, X. Blasco, M. Porti, M. Nafrı́a, X. Aymerich

Research output: Contribution to journalArticle

Abstract

The reliability of AFM grown SiO2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow. Roughness is the central issue of this work due to its importance in relation to the quality of ultra thin dielectrics.

Original languageEnglish
Pages (from-to)1077-1079
Number of pages3
JournalMicroelectronics Reliability
Volume41
Issue number7
DOIs
Publication statusPublished - 1 Jan 2001

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