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Colour management of InGaN/GaN based monolithic two-wavelength LEDs
A. Yadav
, M. Zulonas
, I.E. Titkov
, V.L. Zerova
, K.A. Fedorova
, A.F. Tsatsulnikov
, W.V. Lundin
, A.V. Sakharov
, Grigorii S. Sokolovskii
,
E.U. Rafailov
Aston Institute of Photonic Technologies (AiPT)
Russian Academy of Sciences
Aston University
St. Petersburg State Electrotechnical University "LETI"
Research output
:
Unpublished contribution to conference
›
Abstract
Overview
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Keyphrases
Agilent
16%
Color Management
100%
Color Rendering Index
16%
Color Temperature
100%
Current Pulse
33%
Current Width
16%
Daylighting
16%
Duty Cycle
66%
Electroluminescence
16%
Extended Operation
16%
Flux Ratio
16%
Flux-independent
16%
GaN-based
100%
Growth Technology
16%
High Duty Cycle
16%
Indium Gallium Nitride (InGaN)
100%
Input Current
16%
Input Pulse
16%
Integrating Sphere
16%
Joule Heating
16%
Lighting Source
16%
Luminous Efficacy
16%
Luminous Flux
16%
Negligible Effects
16%
Operation Current
33%
Pulse Current Mode
16%
Pulse Generator
16%
Pulse Width
50%
Pulsed Operation
16%
Radiant Flux
16%
Recent Advancements
16%
Short-period Superlattice
16%
Spectrometer
16%
Strong Dependence
16%
Temperature Value
16%
Tuneability
16%
Two-wavelength
100%
Value Cycle
33%
White LED
50%
Width Variation
33%
Engineering
Color Management
100%
Color Temperature
100%
Constant Value
16%
Current Pulse
50%
Duty Cycle
83%
Extended Operation
16%
Luminous Efficacy
16%
Luminous Flux
16%
Negligible Effect
16%
Pulse Duration
50%
Pulse Generator
16%
Resistance Heating
16%
Superlattice
16%
Material Science
Electroluminescence
25%
Joule Heating
25%
Light-Emitting Diode
100%
Resistance Heating
25%
Superlattice
25%
Chemical Engineering
Joule Heating
100%