Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Thomas J. Slight, Szymon Stanczyk, Scott Watson, Amit Yadav, Szymon Grzanka, Edik Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczyński, Steffan Gwyn, Anthony E. Kelly

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Abstract

We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.
Original languageEnglish
Article number112701
JournalApplied Physics Express
Volume11
Issue number11
DOIs
Publication statusPublished - 13 Oct 2018

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    Slight, T. J., Stanczyk, S., Watson, S., Yadav, A., Grzanka, S., Rafailov, E., Perlin, P., Najda, S. P., Leszczyński, M., Gwyn, S., & Kelly, A. E. (2018). Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings. Applied Physics Express, 11(11), [112701]. https://doi.org/10.7567/APEX.11.112701