We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.
Slight, T. J., Stanczyk, S., Watson, S., Yadav, A., Grzanka, S., Rafailov, E., Perlin, P., Najda, S. P., Leszczyński, M., Gwyn, S., & Kelly, A. E. (2018). Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings. Applied Physics Express, 11(11), . https://doi.org/10.7567/APEX.11.112701