Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Thomas J. Slight; Szymon Stanczyk; Scott Watson; Amit Yadav; Szymon Grzanka; Edik Rafailov; Piotr Perlin; Stephen P. Najda; Mike Leszczyński; Steffan Gwyn; Anthony E. Kelly

doi:10.7567/APEX.11.112701

Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Thomas J. Slight
, Szymon Stanczyk
, Scott Watson
, Amit Yadav
, Szymon Grzanka
, Edik Rafailov
, Piotr Perlin
, Stephen P. Najda
, Mike Leszczyński
, Steffan Gwyn
, Anthony E. Kelly

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

49 Citations (SciVal)

Abstract

We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.

Original language	English
Article number	112701
Journal	Applied Physics Express
Volume	11
Issue number	11
DOIs	https://doi.org/10.7567/APEX.11.112701
Publication status	Published - 13 Oct 2018

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title = "Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings",

abstract = "We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.",

author = "Slight, \{Thomas J.\} and Szymon Stanczyk and Scott Watson and Amit Yadav and Szymon Grzanka and Edik Rafailov and Piotr Perlin and Najda, \{Stephen P.\} and Mike Leszczy{\'n}ski and Steffan Gwyn and Kelly, \{Anthony E.\}",

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doi = "10.7567/APEX.11.112701",

language = "English",

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journal = "Applied Physics Express",

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T1 - Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

AU - Slight, Thomas J.

AU - Stanczyk, Szymon

AU - Watson, Scott

AU - Yadav, Amit

AU - Grzanka, Szymon

AU - Rafailov, Edik

AU - Perlin, Piotr

AU - Najda, Stephen P.

AU - Leszczyński, Mike

AU - Gwyn, Steffan

AU - Kelly, Anthony E.

PY - 2018/10/13

Y1 - 2018/10/13

N2 - We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.

AB - We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.

UR - http://iopscience.iop.org/article/10.7567/APEX.11.112701/meta

U2 - 10.7567/APEX.11.112701

DO - 10.7567/APEX.11.112701

M3 - Article

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

M1 - 112701

ER -

Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

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