Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. Rafailov

Research output: Contribution to journalArticle

Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.
Original languageEnglish
Article number081114
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
Publication statusPublished - 23 Aug 2012

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continuous radiation
electromagnetic radiation
quantum dots
optical communication
trapping
wavelengths

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Kruczek, T. ; Leyman, R. ; Carnegie, D. ; Bazieva, N. ; Erbert, G. ; Schulz, S. ; Reardon, C. ; Reynolds, S. ; Rafailov, E. / Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. In: Applied Physics Letters. 2012 ; Vol. 101, No. 8.
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Kruczek, T, Leyman, R, Carnegie, D, Bazieva, N, Erbert, G, Schulz, S, Reardon, C, Reynolds, S & Rafailov, E 2012, 'Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device', Applied Physics Letters, vol. 101, no. 8, 081114. https://doi.org/10.1063/1.4747724

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. / Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E.

In: Applied Physics Letters, Vol. 101, No. 8, 081114, 23.08.2012.

Research output: Contribution to journalArticle

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