Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia a. Fedorova; Andrey F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Wyn Meredith; Edik U. Rafailov; Thomas J. Slight

doi:10.1117/12.2211046

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Modestas Zulonas^*, Ilya E. Titkov, Amit Yadav, Ksenia a. Fedorova, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Wyn Meredith, Edik U. Rafailov, Thomas J. Slight

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Original language	English
Title of host publication	Light-emitting diodes
Subtitle of host publication	materials, devices, and applications for solid state lighting XX
Editors	Heonsu Jeon, Li-Wei Tu, Michael R. Krames, Martin Strassburg
Place of Publication	Bellingham, WA (US)
Publisher	SPIE
Number of pages	8
ISBN (Print)	9781510600034
DOIs	https://doi.org/10.1117/12.2211046
Publication status	Published - 8 Mar 2016
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - , United Kingdom Duration: 15 Feb 2016 → 28 Feb 2016

Publication series

Name	SPIE proceedings
Publisher	SPIE
Volume	9768
ISSN (Print)	0277-786X
ISSN (Electronic)	2410-9045

Conference

Conference	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Country/Territory	United Kingdom
Period	15/02/16 → 28/02/16

Bibliographical note

Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016).

Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

DOI: http://dx.doi.org/10.1117/12.2211046

Keywords

capacitance-voltage
epi layer
light emitting diode
magnesium
MOCVD
P-GaN

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10.1117/12.2211046

Correlation between p-GaN growth environment
Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016). Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2211046
Final published version, 526 KB

http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2502323

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Zulonas, M., Titkov, I. E., Yadav, A., Fedorova, K. A., Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Meredith, W., Rafailov, E. U., & Slight, T. J. (2016). Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. In H. Jeon, L.-W. Tu, M. R. Krames, & M. Strassburg (Eds.), Light-emitting diodes: materials, devices, and applications for solid state lighting XX Article 97680N (SPIE proceedings; Vol. 9768). SPIE. https://doi.org/10.1117/12.2211046

Zulonas, Modestas ; Titkov, Ilya E. ; Yadav, Amit et al. / Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. Light-emitting diodes: materials, devices, and applications for solid state lighting XX. editor / Heonsu Jeon ; Li-Wei Tu ; Michael R. Krames ; Martin Strassburg. Bellingham, WA (US) : SPIE, 2016. (SPIE proceedings).

@inproceedings{29369d307fc342e6a249a8959fc05f06,

title = "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs",

abstract = "Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.",

keywords = "capacitance-voltage, epi layer, light emitting diode, magnesium, MOCVD, P-GaN",

author = "Modestas Zulonas and Titkov, {Ilya E.} and Amit Yadav and Fedorova, {Ksenia a.} and Tsatsulnikov, {Andrey F.} and Lundin, {Wsevolod V.} and Sakharov, {Alexey V.} and Wyn Meredith and Rafailov, {Edik U.} and Slight, {Thomas J.}",

note = "Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov {"}Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs{"}, Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016). Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2211046; Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX ; Conference date: 15-02-2016 Through 28-02-2016",

year = "2016",

month = mar,

day = "8",

doi = "10.1117/12.2211046",

language = "English",

isbn = "9781510600034",

series = "SPIE proceedings",

publisher = "SPIE",

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booktitle = "Light-emitting diodes",

address = "United States",

}

Zulonas, M, Titkov, IE, Yadav, A, Fedorova, KA, Tsatsulnikov, AF, Lundin, WV, Sakharov, AV, Meredith, W, Rafailov, EU & Slight, TJ 2016, Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. in H Jeon, L-W Tu, MR Krames & M Strassburg (eds), Light-emitting diodes: materials, devices, and applications for solid state lighting XX., 97680N, SPIE proceedings, vol. 9768, SPIE, Bellingham, WA (US), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, United Kingdom, 15/02/16. https://doi.org/10.1117/12.2211046

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. / Zulonas, Modestas; Titkov, Ilya E.; Yadav, Amit et al.
Light-emitting diodes: materials, devices, and applications for solid state lighting XX. ed. / Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg. Bellingham, WA (US): SPIE, 2016. 97680N (SPIE proceedings; Vol. 9768).

Research output: Chapter in Book/Published conference output › Conference publication

TY - GEN

T1 - Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

AU - Zulonas, Modestas

AU - Titkov, Ilya E.

AU - Yadav, Amit

AU - Fedorova, Ksenia a.

AU - Tsatsulnikov, Andrey F.

AU - Lundin, Wsevolod V.

AU - Sakharov, Alexey V.

AU - Meredith, Wyn

AU - Rafailov, Edik U.

AU - Slight, Thomas J.

N1 - Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016). Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2211046

PY - 2016/3/8

Y1 - 2016/3/8

N2 - Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

AB - Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

KW - capacitance-voltage

KW - epi layer

KW - light emitting diode

KW - magnesium

KW - MOCVD

KW - P-GaN

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U2 - 10.1117/12.2211046

DO - 10.1117/12.2211046

M3 - Conference publication

AN - SCOPUS:84978718662

SN - 9781510600034

T3 - SPIE proceedings

BT - Light-emitting diodes

A2 - Jeon, Heonsu

A2 - Tu, Li-Wei

A2 - Krames, Michael R.

A2 - Strassburg, Martin

PB - SPIE

CY - Bellingham, WA (US)

T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

Y2 - 15 February 2016 through 28 February 2016

ER -

Zulonas M, Titkov IE, Yadav A, Fedorova KA, Tsatsulnikov AF, Lundin WV et al. Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. In Jeon H, Tu LW, Krames MR, Strassburg M, editors, Light-emitting diodes: materials, devices, and applications for solid state lighting XX. Bellingham, WA (US): SPIE. 2016. 97680N. (SPIE proceedings). doi: 10.1117/12.2211046

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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