Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Modestas Zulonas*, Ilya E. Titkov, Amit Yadav, Ksenia a. Fedorova, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Wyn Meredith, Edik U. Rafailov, Thomas J. Slight

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference publication

Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.
Original languageEnglish
Title of host publicationLight-emitting diodes
Subtitle of host publicationmaterials, devices, and applications for solid state lighting XX
EditorsHeonsu Jeon, Li-Wei Tu, Michael R. Krames, Martin Strassburg
Place of PublicationBellingham, WA (US)
PublisherSPIE
Number of pages8
ISBN (Print)9781510600034
DOIs
Publication statusPublished - 8 Mar 2016
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - , United Kingdom
Duration: 15 Feb 201628 Feb 2016

Publication series

NameSPIE proceedings
PublisherSPIE
Volume9768
ISSN (Print)0277-786X
ISSN (Electronic)2410-9045

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
CountryUnited Kingdom
Period15/02/1628/02/16

Bibliographical note

Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016).

Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

DOI: http://dx.doi.org/10.1117/12.2211046

Keywords

  • capacitance-voltage
  • epi layer
  • light emitting diode
  • magnesium
  • MOCVD
  • P-GaN

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    Yadav, A., Titkov, I., Sokolovskii, G. S., Karpov, S. Y., Dudelev, V. V., Soboleva, K. K., Strassburg, M., Pietzonka, I., Lugauer, H-J. & Rafailov, E. U., 8 Mar 2016, Light-emitting diodes: materials, devices, and applications for solid state lighting XX. Jeon, H., Tu, L-W., Krames, M. R. & Strassburg, M. (eds.). Bellingham, WA (US): SPIE, 7 p. 97681K. (SPIE proceedings; vol. 9768).

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