Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Modestas Zulonas*, Ilya E. Titkov, Amit Yadav, Ksenia a. Fedorova, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Wyn Meredith, Edik U. Rafailov, Thomas J. Slight

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.
Original languageEnglish
Title of host publicationLight-emitting diodes
Subtitle of host publicationmaterials, devices, and applications for solid state lighting XX
EditorsHeonsu Jeon, Li-Wei Tu, Michael R. Krames, Martin Strassburg
Place of PublicationBellingham, WA (US)
PublisherSPIE
Number of pages8
ISBN (Print)9781510600034
DOIs
Publication statusPublished - 8 Mar 2016
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - , United Kingdom
Duration: 15 Feb 201628 Feb 2016

Publication series

NameSPIE proceedings
PublisherSPIE
Volume9768
ISSN (Print)0277-786X
ISSN (Electronic)2410-9045

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
CountryUnited Kingdom
Period15/02/1628/02/16

Fingerprint

Electrical Properties
Electroluminescence
electroluminescence
Optical Properties
Light emitting diodes
Photoluminescence
Electric properties
light emitting diodes
Optical properties
electrical properties
photoluminescence
optical properties
virtual reality
Sheet resistance
Metallorganic chemical vapor deposition
MOCVD
Gas mixtures
metalorganic chemical vapor deposition
gas mixtures
Diodes

Bibliographical note

Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016).

Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

DOI: http://dx.doi.org/10.1117/12.2211046

Keywords

  • capacitance-voltage
  • epi layer
  • light emitting diode
  • magnesium
  • MOCVD
  • P-GaN

Cite this

Zulonas, M., Titkov, I. E., Yadav, A., Fedorova, K. A., Tsatsulnikov, A. F., Lundin, W. V., ... Slight, T. J. (2016). Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. In H. Jeon, L-W. Tu, M. R. Krames, & M. Strassburg (Eds.), Light-emitting diodes: materials, devices, and applications for solid state lighting XX [97680N] (SPIE proceedings; Vol. 9768). Bellingham, WA (US): SPIE. https://doi.org/10.1117/12.2211046
Zulonas, Modestas ; Titkov, Ilya E. ; Yadav, Amit ; Fedorova, Ksenia a. ; Tsatsulnikov, Andrey F. ; Lundin, Wsevolod V. ; Sakharov, Alexey V. ; Meredith, Wyn ; Rafailov, Edik U. ; Slight, Thomas J. / Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. Light-emitting diodes: materials, devices, and applications for solid state lighting XX. editor / Heonsu Jeon ; Li-Wei Tu ; Michael R. Krames ; Martin Strassburg. Bellingham, WA (US) : SPIE, 2016. (SPIE proceedings).
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title = "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs",
abstract = "Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.",
keywords = "capacitance-voltage, epi layer, light emitting diode, magnesium, MOCVD, P-GaN",
author = "Modestas Zulonas and Titkov, {Ilya E.} and Amit Yadav and Fedorova, {Ksenia a.} and Tsatsulnikov, {Andrey F.} and Lundin, {Wsevolod V.} and Sakharov, {Alexey V.} and Wyn Meredith and Rafailov, {Edik U.} and Slight, {Thomas J.}",
note = "Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov {"}Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs{"}, Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016). Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2211046",
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language = "English",
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Zulonas, M, Titkov, IE, Yadav, A, Fedorova, KA, Tsatsulnikov, AF, Lundin, WV, Sakharov, AV, Meredith, W, Rafailov, EU & Slight, TJ 2016, Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. in H Jeon, L-W Tu, MR Krames & M Strassburg (eds), Light-emitting diodes: materials, devices, and applications for solid state lighting XX., 97680N, SPIE proceedings, vol. 9768, SPIE, Bellingham, WA (US), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, United Kingdom, 15/02/16. https://doi.org/10.1117/12.2211046

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. / Zulonas, Modestas; Titkov, Ilya E.; Yadav, Amit; Fedorova, Ksenia a.; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Meredith, Wyn; Rafailov, Edik U.; Slight, Thomas J.

Light-emitting diodes: materials, devices, and applications for solid state lighting XX. ed. / Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg. Bellingham, WA (US) : SPIE, 2016. 97680N (SPIE proceedings; Vol. 9768).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

AU - Zulonas, Modestas

AU - Titkov, Ilya E.

AU - Yadav, Amit

AU - Fedorova, Ksenia a.

AU - Tsatsulnikov, Andrey F.

AU - Lundin, Wsevolod V.

AU - Sakharov, Alexey V.

AU - Meredith, Wyn

AU - Rafailov, Edik U.

AU - Slight, Thomas J.

N1 - Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas Slight ; Wyn Meredith and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (March 8, 2016). Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2211046

PY - 2016/3/8

Y1 - 2016/3/8

N2 - Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

AB - Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

KW - capacitance-voltage

KW - epi layer

KW - light emitting diode

KW - magnesium

KW - MOCVD

KW - P-GaN

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U2 - 10.1117/12.2211046

DO - 10.1117/12.2211046

M3 - Conference contribution

AN - SCOPUS:84978718662

SN - 9781510600034

T3 - SPIE proceedings

BT - Light-emitting diodes

A2 - Jeon, Heonsu

A2 - Tu, Li-Wei

A2 - Krames, Michael R.

A2 - Strassburg, Martin

PB - SPIE

CY - Bellingham, WA (US)

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Zulonas M, Titkov IE, Yadav A, Fedorova KA, Tsatsulnikov AF, Lundin WV et al. Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs. In Jeon H, Tu L-W, Krames MR, Strassburg M, editors, Light-emitting diodes: materials, devices, and applications for solid state lighting XX. Bellingham, WA (US): SPIE. 2016. 97680N. (SPIE proceedings). https://doi.org/10.1117/12.2211046