Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

Amit Yadav*, Ilya E. Titkov, Alexei V. Sakharov, Wsevolod V. Lundin, Andrey E. Nikolaev, Grigorii S. Sokolovskii, Andrey F. Tsatsulnikov, Edik U. Rafailov

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

Original languageEnglish
Article number1158
JournalApplied Sciences (Switzerland)
Volume8
Issue number7
DOIs
Publication statusPublished - 17 Jul 2018

Fingerprint

Light emitting diodes
light emitting diodes
Color
color
Semiconductor quantum wells
quantum wells
Temperature
temperature
barrier layers
Phosphors
phosphors
Light sources
pumping
Modulation
modulation

Bibliographical note

©2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access
article distributed under the terms and conditions of the Creative Commons Attribution
(CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Keywords

  • Color rendering
  • Colorimetry
  • High CRI
  • Light-emitting diodes
  • Monolithic LED

Cite this

Yadav, Amit ; Titkov, Ilya E. ; Sakharov, Alexei V. ; Lundin, Wsevolod V. ; Nikolaev, Andrey E. ; Sokolovskii, Grigorii S. ; Tsatsulnikov, Andrey F. ; Rafailov, Edik U. / Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index. In: Applied Sciences (Switzerland). 2018 ; Vol. 8, No. 7.
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abstract = "We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.",
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Yadav, A, Titkov, IE, Sakharov, AV, Lundin, WV, Nikolaev, AE, Sokolovskii, GS, Tsatsulnikov, AF & Rafailov, EU 2018, 'Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index', Applied Sciences (Switzerland), vol. 8, no. 7, 1158. https://doi.org/10.3390/app8071158

Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index. / Yadav, Amit; Titkov, Ilya E.; Sakharov, Alexei V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Sokolovskii, Grigorii S.; Tsatsulnikov, Andrey F.; Rafailov, Edik U.

In: Applied Sciences (Switzerland), Vol. 8, No. 7, 1158, 17.07.2018.

Research output: Contribution to journalArticle

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AU - Yadav, Amit

AU - Titkov, Ilya E.

AU - Sakharov, Alexei V.

AU - Lundin, Wsevolod V.

AU - Nikolaev, Andrey E.

AU - Sokolovskii, Grigorii S.

AU - Tsatsulnikov, Andrey F.

AU - Rafailov, Edik U.

N1 - ©2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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N2 - We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

AB - We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

KW - Color rendering

KW - Colorimetry

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