Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

Amit Yadav; Ilya E. Titkov; Alexei V. Sakharov; Wsevolod V. Lundin; Andrey E. Nikolaev; Grigorii S. Sokolovskii; Andrey F. Tsatsulnikov; Edik U. Rafailov

doi:10.3390/app8071158

Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

Amit Yadav^*
, Ilya E. Titkov
, Alexei V. Sakharov
, Wsevolod V. Lundin
, Andrey E. Nikolaev
, Grigorii S. Sokolovskii
, Andrey F. Tsatsulnikov
, Edik U. Rafailov

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

87 Downloads (Pure)

Abstract

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm² to 12.9 A/cm². It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

Original language	English
Article number	1158
Journal	Applied Sciences (Switzerland)
Volume	8
Issue number	7
DOIs	https://doi.org/10.3390/app8071158
Publication status	Published - 17 Jul 2018

Bibliographical note

©2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access
article distributed under the terms and conditions of the Creative Commons Attribution
(CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Keywords

Color rendering
Colorimetry
High CRI
Light-emitting diodes
Monolithic LED

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10.3390/app8071158Licence: CC BY 3.0

Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index
©2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Final published version, 530 KBLicence: CC BY 3.0

Cite this

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title = "Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index",

abstract = "We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.",

keywords = "Color rendering, Colorimetry, High CRI, Light-emitting diodes, Monolithic LED",

author = "Amit Yadav and Titkov, \{Ilya E.\} and Sakharov, \{Alexei V.\} and Lundin, \{Wsevolod V.\} and Nikolaev, \{Andrey E.\} and Sokolovskii, \{Grigorii S.\} and Tsatsulnikov, \{Andrey F.\} and Rafailov, \{Edik U.\}",

note = "{\textcopyright}2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).",

year = "2018",

month = jul,

day = "17",

doi = "10.3390/app8071158",

language = "English",

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journal = "Applied Sciences (Switzerland)",

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T1 - Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

AU - Yadav, Amit

AU - Titkov, Ilya E.

AU - Sakharov, Alexei V.

AU - Lundin, Wsevolod V.

AU - Nikolaev, Andrey E.

AU - Sokolovskii, Grigorii S.

AU - Tsatsulnikov, Andrey F.

AU - Rafailov, Edik U.

N1 - ©2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

PY - 2018/7/17

Y1 - 2018/7/17

N2 - We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

AB - We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

KW - Color rendering

KW - Colorimetry

KW - High CRI

KW - Light-emitting diodes

KW - Monolithic LED

UR - https://www.scopus.com/pages/publications/85050397452

UR - http://www.mdpi.com/2076-3417/8/7/1158

U2 - 10.3390/app8071158

DO - 10.3390/app8071158

M3 - Article

AN - SCOPUS:85050397452

SN - 2076-3417

VL - 8

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

IS - 7

M1 - 1158

ER -

Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

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Keywords

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