Direct laser writing of a channel waveguide in Al2O3:Nd thin film

Andrey G. Okhrimchuk; Alexey I. Krikunov; Yurii A. Obod; Oleg D. Volpian

doi:10.2961/jlmn.2015.02.0003

Direct laser writing of a channel waveguide in Al₂O₃:Nd thin film

Andrey G. Okhrimchuk, Alexey I. Krikunov, Yurii A. Obod, Oleg D. Volpian

Research output: Contribution to journal › Article › peer-review

Abstract

The femtosecond laser modification of refractive index in amorphous Al₂O₃:Nd thin film prepared by rf magnetron sputtering is investigated. Modifications of the refractive index in a sample with a single Al₂O₃:Nd layer and in a sample composed of the Al₂O₃:Nd layer and SiO₂ layer on the top were compared. Advantages arising from addition of the SiO₂ layer are shown. The film was patterned in order to form an active waveguide. Waveguide loss and mode composition were investigated experimentally and theoretically. Spectrum and kinetics of luminescence in the region of 1.06 μm were measured.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Journal of Laser Micro Nanoengineering
Volume	10
Issue number	2
DOIs	https://doi.org/10.2961/jlmn.2015.02.0003
Publication status	Published - May 2015

Bibliographical note

Copyright 2015 Japan Laser Processing Society.
This paper was published in Journal of Laser Micro Nanoengineering and is made available as an electronic reprint with permission of JLPS. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

amorphous aluminum oxide
femtosecond laser direct writing
thin film
waveguide

Access to Document

10.2961/jlmn.2015.02.0003

Direct laser writing of a channel waveguide in Al2O3Nd thin film
Copyright 2015 Japan Laser Processing Society. This paper was published in Journal of Laser Micro Nanoengineering and is made available as an electronic reprint with permission of JLPS. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Accepted author manuscript, 497 KB

http://www.jlps.gr.jp/jlmn/index.php

Cite this

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abstract = "The femtosecond laser modification of refractive index in amorphous Al2O3:Nd thin film prepared by rf magnetron sputtering is investigated. Modifications of the refractive index in a sample with a single Al2O3:Nd layer and in a sample composed of the Al2O3:Nd layer and SiO2 layer on the top were compared. Advantages arising from addition of the SiO2 layer are shown. The film was patterned in order to form an active waveguide. Waveguide loss and mode composition were investigated experimentally and theoretically. Spectrum and kinetics of luminescence in the region of 1.06 μm were measured.",

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