Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Steffan Gwyn; Scott Watson; Thomas James Slight; Martin Knapp; Shaun Viola; Pavlo Ivanov; Weikang Zhang; Amit Yadav; Edik U. Rafailov; Mohsin Haji; Kevin Edward Docherty; Szymon Stanczyk; Szymon Grzanka; Piotr Perlin; Stephen Najda; Mike Leszczynksi; Anthony Kelly

doi:10.1109/JPHOT.2020.3045218

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Steffan Gwyn, Scott Watson, Thomas James Slight, Martin Knapp, Shaun Viola, Pavlo Ivanov, Weikang Zhang, Amit Yadav, Edik U. Rafailov, Mohsin Haji, Kevin Edward Docherty, Szymon Stanczyk, Szymon Grzanka, Piotr Perlin, Stephen Najda, Mike Leszczynksi, Anthony Kelly

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

Original language	English
Article number	1500510
Journal	IEEE Photonics Journal
Volume	13
Issue number	1
Early online date	16 Dec 2020
DOIs	https://doi.org/10.1109/JPHOT.2020.3045218
Publication status	Published - 1 Feb 2021

Bibliographical note

This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/

Funding: This research has been supported by the European Union with grant E113162, Innovate UK
through grant 132543, the National Centre for Research and Development with grant
E113162/NCBiR/2020, and the Engineering and Physical Sciences Research Council (RCUK
Grant no. EP/L015323/1)

Keywords

Bandwidth
distributed feedback laser diode
Frequency response
Gallium Nitride
Gallium nitride
Gratings
Modulation
optical communications
Photonics
Resonant frequency

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10.1109/JPHOT.2020.3045218Licence: CC BY 3.0

Dynamic Device Characteristics and Linewidth Measurement
This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/
Final published version, 761 KBLicence: CC BY 3.0

Cite this

Gwyn, S., Watson, S., Slight, T. J., Knapp, M., Viola, S., Ivanov, P., Zhang, W., Yadav, A., Rafailov, E. U., Haji, M., Docherty, K. E., Stanczyk, S., Grzanka, S., Perlin, P., Najda, S., Leszczynksi, M., & Kelly, A. (2021). Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes. IEEE Photonics Journal, 13(1), Article 1500510. https://doi.org/10.1109/JPHOT.2020.3045218

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title = "Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes",

abstract = "We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.",

keywords = "Bandwidth, distributed feedback laser diode, Frequency response, Gallium Nitride, Gallium nitride, Gratings, Modulation, optical communications, Photonics, Resonant frequency",

author = "Steffan Gwyn and Scott Watson and Slight, {Thomas James} and Martin Knapp and Shaun Viola and Pavlo Ivanov and Weikang Zhang and Amit Yadav and Rafailov, {Edik U.} and Mohsin Haji and Docherty, {Kevin Edward} and Szymon Stanczyk and Szymon Grzanka and Piotr Perlin and Stephen Najda and Mike Leszczynksi and Anthony Kelly",

note = "This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ Funding: This research has been supported by the European Union with grant E113162, Innovate UK through grant 132543, the National Centre for Research and Development with grant E113162/NCBiR/2020, and the Engineering and Physical Sciences Research Council (RCUK Grant no. EP/L015323/1)",

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Gwyn, S, Watson, S, Slight, TJ, Knapp, M, Viola, S, Ivanov, P, Zhang, W, Yadav, A, Rafailov, EU, Haji, M, Docherty, KE, Stanczyk, S, Grzanka, S, Perlin, P, Najda, S, Leszczynksi, M & Kelly, A 2021, 'Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes', IEEE Photonics Journal, vol. 13, no. 1, 1500510. https://doi.org/10.1109/JPHOT.2020.3045218

TY - JOUR

T1 - Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

AU - Gwyn, Steffan

AU - Watson, Scott

AU - Slight, Thomas James

AU - Knapp, Martin

AU - Viola, Shaun

AU - Ivanov, Pavlo

AU - Zhang, Weikang

AU - Yadav, Amit

AU - Rafailov, Edik U.

AU - Haji, Mohsin

AU - Docherty, Kevin Edward

AU - Stanczyk, Szymon

AU - Grzanka, Szymon

AU - Perlin, Piotr

AU - Najda, Stephen

AU - Leszczynksi, Mike

AU - Kelly, Anthony

N1 - This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ Funding: This research has been supported by the European Union with grant E113162, Innovate UK through grant 132543, the National Centre for Research and Development with grant E113162/NCBiR/2020, and the Engineering and Physical Sciences Research Council (RCUK Grant no. EP/L015323/1)

PY - 2021/2/1

Y1 - 2021/2/1

N2 - We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

AB - We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

KW - Bandwidth

KW - distributed feedback laser diode

KW - Frequency response

KW - Gallium Nitride

KW - Gallium nitride

KW - Gratings

KW - Modulation

KW - optical communications

KW - Photonics

KW - Resonant frequency

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U2 - 10.1109/JPHOT.2020.3045218

DO - 10.1109/JPHOT.2020.3045218

M3 - Article

SN - 1943-0647

VL - 13

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 1

M1 - 1500510

ER -

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Abstract

Bibliographical note

Keywords

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