Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Sang Su Kim*, Jong Woo Kim

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Mullite Bi2Fe4O9 thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The deposited Bi2Fe4O9 thin films were annealed at a series of temperatures in the range 700–850 °C in an oxygen atmosphere using a rapid thermal annealing process. The effect of the annealing temperature on the structural, electrical and multiferroic properties of the Bi2Fe4O9 thin films was investigated. The results showed that the Bi2Fe4O9 thin film that was annealed at 800 °C exhibits a well-crystallized orthorhombic phase with the complete absence of secondary phases, in marked contrast to the thin films that were annealed at 700, 750, and 850 °C for which the formation of secondary phases was observed. Moreover, the Bi2Fe4O9 thin film that was annealed at 800 °C was found to exhibit a low leakage current density and enhanced multiferroic properties, both of which are indicative of the formation of a pure mullite phase with a stable structure.

Original languageEnglish
Pages (from-to)403-409
Number of pages7
JournalJournal of Sol-Gel Science and Technology
Volume73
Issue number2
Early online date25 Oct 2014
DOIs
Publication statusPublished - 1 Feb 2015

Fingerprint

Mullite
Annealing
Thin films
annealing
thin films
Temperature
temperature
Rapid thermal annealing
Leakage currents
aluminosilicate
leakage
Current density
electrical properties
current density
Oxygen
atmospheres
oxygen
Substrates

Keywords

  • BiFeO thin film
  • Chemical solution deposition
  • Electrical properties
  • Multiferroic properties

Cite this

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title = "Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films",
abstract = "Mullite Bi2Fe4O9 thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The deposited Bi2Fe4O9 thin films were annealed at a series of temperatures in the range 700–850 °C in an oxygen atmosphere using a rapid thermal annealing process. The effect of the annealing temperature on the structural, electrical and multiferroic properties of the Bi2Fe4O9 thin films was investigated. The results showed that the Bi2Fe4O9 thin film that was annealed at 800 °C exhibits a well-crystallized orthorhombic phase with the complete absence of secondary phases, in marked contrast to the thin films that were annealed at 700, 750, and 850 °C for which the formation of secondary phases was observed. Moreover, the Bi2Fe4O9 thin film that was annealed at 800 °C was found to exhibit a low leakage current density and enhanced multiferroic properties, both of which are indicative of the formation of a pure mullite phase with a stable structure.",
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Effect of the annealing temperature on the structural and multiferroic properties of mullite Bi2Fe4O9 thin films. / Raghavan, Chinnambedu Murugesan; Kim, Jin Won; Kim, Sang Su; Kim, Jong Woo.

In: Journal of Sol-Gel Science and Technology, Vol. 73, No. 2, 01.02.2015, p. 403-409.

Research output: Contribution to journalArticle

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AU - Kim, Jong Woo

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AB - Mullite Bi2Fe4O9 thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The deposited Bi2Fe4O9 thin films were annealed at a series of temperatures in the range 700–850 °C in an oxygen atmosphere using a rapid thermal annealing process. The effect of the annealing temperature on the structural, electrical and multiferroic properties of the Bi2Fe4O9 thin films was investigated. The results showed that the Bi2Fe4O9 thin film that was annealed at 800 °C exhibits a well-crystallized orthorhombic phase with the complete absence of secondary phases, in marked contrast to the thin films that were annealed at 700, 750, and 850 °C for which the formation of secondary phases was observed. Moreover, the Bi2Fe4O9 thin film that was annealed at 800 °C was found to exhibit a low leakage current density and enhanced multiferroic properties, both of which are indicative of the formation of a pure mullite phase with a stable structure.

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