Effects of donor W 6+ -ion doping on the microstructural and multiferroic properties of Aurivillius Bi 7 Fe 3 Ti 3 O 21 thin film

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Jong Woo Kim, Sang Su Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Aurivillius phase Bi 7 Fe 3 (Ti 3 - x W x )O 21 + δ (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by using a chemical solution deposition method. The W 6+ -ion doped Bi 7 Fe 3 Ti 3 O 21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2P r ) and the coercive field (2E c ) values were 33.5 μC/cm 2 and 825 kV/cm, respectively whereas, the measured 2P r value of the un-doped Bi 7 Fe 3 Ti 3 O 21 thin film was 3.5 μC/cm 2 at an applied electric field of 318 kV/cm. Furthermore, the Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature.

Original languageEnglish
Pages (from-to)201-206
Number of pages6
JournalApplied Surface Science
Volume346
DOIs
Publication statusPublished - 15 Aug 2015

Keywords

  • Chemical solution deposition
  • Electrical properties
  • Ferroelectricity
  • Magnetic properties
  • Thin films

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