Effects of donor W 6+ -ion doping on the microstructural and multiferroic properties of Aurivillius Bi 7 Fe 3 Ti 3 O 21 thin film

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Jong Woo Kim, Sang Su Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Aurivillius phase Bi 7 Fe 3 (Ti 3 - x W x )O 21 + δ (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by using a chemical solution deposition method. The W 6+ -ion doped Bi 7 Fe 3 Ti 3 O 21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2P r ) and the coercive field (2E c ) values were 33.5 μC/cm 2 and 825 kV/cm, respectively whereas, the measured 2P r value of the un-doped Bi 7 Fe 3 Ti 3 O 21 thin film was 3.5 μC/cm 2 at an applied electric field of 318 kV/cm. Furthermore, the Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature.

Original languageEnglish
Pages (from-to)201-206
Number of pages6
JournalApplied Surface Science
Volume346
DOIs
Publication statusPublished - 15 Aug 2015

Fingerprint

Doping (additives)
Ions
Thin films
thin films
ions
electrical faults
Magnetization
Electric fields
Polarization
magnetization
electric fields
polarization
Hysteresis loops
Leakage currents
Ferroelectric materials
leakage
Current density
hysteresis
electrical properties
current density

Keywords

  • Chemical solution deposition
  • Electrical properties
  • Ferroelectricity
  • Magnetic properties
  • Thin films

Cite this

@article{b90a2f4c8ace428c9eef33df4d34a47b,
title = "Effects of donor W 6+ -ion doping on the microstructural and multiferroic properties of Aurivillius Bi 7 Fe 3 Ti 3 O 21 thin film",
abstract = "Aurivillius phase Bi 7 Fe 3 (Ti 3 - x W x )O 21 + δ (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by using a chemical solution deposition method. The W 6+ -ion doped Bi 7 Fe 3 Ti 3 O 21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2P r ) and the coercive field (2E c ) values were 33.5 μC/cm 2 and 825 kV/cm, respectively whereas, the measured 2P r value of the un-doped Bi 7 Fe 3 Ti 3 O 21 thin film was 3.5 μC/cm 2 at an applied electric field of 318 kV/cm. Furthermore, the Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature.",
keywords = "Chemical solution deposition, Electrical properties, Ferroelectricity, Magnetic properties, Thin films",
author = "Raghavan, {Chinnambedu Murugesan} and Kim, {Jin Won} and Choi, {Ji Ya} and Kim, {Jong Woo} and Kim, {Sang Su}",
year = "2015",
month = "8",
day = "15",
doi = "10.1016/j.apsusc.2015.04.020",
language = "English",
volume = "346",
pages = "201--206",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

Effects of donor W 6+ -ion doping on the microstructural and multiferroic properties of Aurivillius Bi 7 Fe 3 Ti 3 O 21 thin film. / Raghavan, Chinnambedu Murugesan; Kim, Jin Won; Choi, Ji Ya; Kim, Jong Woo; Kim, Sang Su.

In: Applied Surface Science, Vol. 346, 15.08.2015, p. 201-206.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of donor W 6+ -ion doping on the microstructural and multiferroic properties of Aurivillius Bi 7 Fe 3 Ti 3 O 21 thin film

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Jin Won

AU - Choi, Ji Ya

AU - Kim, Jong Woo

AU - Kim, Sang Su

PY - 2015/8/15

Y1 - 2015/8/15

N2 - Aurivillius phase Bi 7 Fe 3 (Ti 3 - x W x )O 21 + δ (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by using a chemical solution deposition method. The W 6+ -ion doped Bi 7 Fe 3 Ti 3 O 21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2P r ) and the coercive field (2E c ) values were 33.5 μC/cm 2 and 825 kV/cm, respectively whereas, the measured 2P r value of the un-doped Bi 7 Fe 3 Ti 3 O 21 thin film was 3.5 μC/cm 2 at an applied electric field of 318 kV/cm. Furthermore, the Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature.

AB - Aurivillius phase Bi 7 Fe 3 (Ti 3 - x W x )O 21 + δ (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by using a chemical solution deposition method. The W 6+ -ion doped Bi 7 Fe 3 Ti 3 O 21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2P r ) and the coercive field (2E c ) values were 33.5 μC/cm 2 and 825 kV/cm, respectively whereas, the measured 2P r value of the un-doped Bi 7 Fe 3 Ti 3 O 21 thin film was 3.5 μC/cm 2 at an applied electric field of 318 kV/cm. Furthermore, the Bi 7 Fe 3 (Ti 2.94 W 0.06 )O 21 + δ thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature.

KW - Chemical solution deposition

KW - Electrical properties

KW - Ferroelectricity

KW - Magnetic properties

KW - Thin films

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