Effects of (Dy, Zn) co-doping on structural and electrical properties of BiFeO 3 thin films

C. M. Raghavan, J. W. Kim, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Pure BiFeO 3 (BFO) and (Dy, Zn) co-doped (Bi 0.9 Dy 0.1 )(Fe 0.975 Zn 0.025 )O 3-δ (BDFZO) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by a chemical solution deposition method. Effects of (Dy, Zn) co-doping on the structural and electrical properties of BFO were studied. Both the thin films were crystallized as randomly oriented polycrystalline distorted rhombohedral structures, with no detectable impurity and secondary phases. Large remnant polarization (2P r ) of 47 μC/cm 2 , low coercive electric field (2E c ) of 925 kV/cm at 1143 kV/cm and low leakage current density of 1.30×10 -6 A/cm 2 at 100 kV were measured for the BDFZO thin film. The improved electrical properties of the BDFZO thin film are ascribed to the stabilization of perovskite structure, defect complex formation between acceptors Zn 2+ and oxygen vacancies of [(ZnFe3 + 2+)′-(VO2 - ••)], pronounced off-center displacement in the perovskite and structural distortion by the Dy and Zn ions doping.

Original languageEnglish
Pages (from-to)2281-2286
Number of pages6
JournalCeramics International
Volume40
Issue number1 PART B
Early online date6 Aug 2013
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • A. Films
  • C. Electrical properties
  • C. Ferroelectric properties
  • D. Perovskites

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