Abstract
Pure BiFeO 3 (BFO) and (Dy, Zn) co-doped (Bi 0.9 Dy 0.1 )(Fe 0.975 Zn 0.025 )O 3-δ (BDFZO) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by a chemical solution deposition method. Effects of (Dy, Zn) co-doping on the structural and electrical properties of BFO were studied. Both the thin films were crystallized as randomly oriented polycrystalline distorted rhombohedral structures, with no detectable impurity and secondary phases. Large remnant polarization (2P r ) of 47 μC/cm 2 , low coercive electric field (2E c ) of 925 kV/cm at 1143 kV/cm and low leakage current density of 1.30×10 -6 A/cm 2 at 100 kV were measured for the BDFZO thin film. The improved electrical properties of the BDFZO thin film are ascribed to the stabilization of perovskite structure, defect complex formation between acceptors Zn 2+ and oxygen vacancies of [(ZnFe3 + 2+)′-(VO2 - ••)], pronounced off-center displacement in the perovskite and structural distortion by the Dy and Zn ions doping.
| Original language | English |
|---|---|
| Pages (from-to) | 2281-2286 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 40 |
| Issue number | 1 PART B |
| Early online date | 6 Aug 2013 |
| DOIs | |
| Publication status | Published - 1 Jan 2014 |
Funding
This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0029634 ).
Keywords
- A. Films
- C. Electrical properties
- C. Ferroelectric properties
- D. Perovskites
Fingerprint
Dive into the research topics of 'Effects of (Dy, Zn) co-doping on structural and electrical properties of BiFeO 3 thin films'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver