Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Sang Su Kim, Jong Woo Kim

Research output: Contribution to journalArticle

Abstract

The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.

Original languageEnglish
Pages (from-to)696-703
Number of pages8
JournalNew Physics: Sae Mulli
Volume64
Issue number7
DOIs
Publication statusPublished - 1 Jul 2014

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thin films
electrical properties
bismuth
crystallinity
leakage
Raman spectra
microstructure
scanning electron microscopy
polarization
diffraction
spectroscopy
x rays

Bibliographical note

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Keywords

  • Aurivillius La doped BiFeTiO thin film
  • Chemical solution deposition
  • Multiferroic properties
  • Structure

Cite this

Raghavan, Chinnambedu Murugesan ; Kim, Jin Won ; Choi, Ji Ya ; Kim, Sang Su ; Kim, Jong Woo. / Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films. In: New Physics: Sae Mulli. 2014 ; Vol. 64, No. 7. pp. 696-703.
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Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films. / Raghavan, Chinnambedu Murugesan; Kim, Jin Won; Choi, Ji Ya; Kim, Sang Su; Kim, Jong Woo.

In: New Physics: Sae Mulli, Vol. 64, No. 7, 01.07.2014, p. 696-703.

Research output: Contribution to journalArticle

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AU - Raghavan, Chinnambedu Murugesan

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AU - Kim, Sang Su

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AB - The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.

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