Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films

Chinnambedu Murugesan Raghavan; Jin Won Kim; Ji Ya Choi; Sang Su Kim; Jong Woo Kim

doi:10.3938/NPSM.64.696

Effects of excessive Bi on the structure and the properties of Aurivillius Bi_5.25La_0.75Fe₂Ti₃O₁₈ thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Sang Su Kim, Jong Woo Kim

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi₆Fe₂Ti₃O₁₈ (Bi_5.25La_0.75Fe₂Ti₃O₁₈) thin films prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10^-5 A/cm² at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2P_r) of 10.5 μC/cm² and a low coercive field (2E_c) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi₆Fe₂Ti₃O₁₈ thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi₆Fe₂Ti₃O₁₈ thin film.

Original language	English
Pages (from-to)	696-703
Number of pages	8
Journal	New Physics: Sae Mulli
Volume	64
Issue number	7
DOIs	https://doi.org/10.3938/NPSM.64.696
Publication status	Published - 1 Jul 2014

Bibliographical note

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Keywords

Aurivillius La doped BiFeTiO thin film
Chemical solution deposition
Multiferroic properties
Structure

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10.3938/NPSM.64.696Licence: CC BY-NC 3.0

Effects of Excessive Bi on the Structure
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Final published version, 1.74 MBLicence: CC BY-NC 3.0

Cite this

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title = "Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films",

abstract = "The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.",

keywords = "Aurivillius La doped BiFeTiO thin film, Chemical solution deposition, Multiferroic properties, Structure",

author = "Raghavan, {Chinnambedu Murugesan} and Kim, {Jin Won} and Choi, {Ji Ya} and Kim, {Sang Su} and Kim, {Jong Woo}",

note = "This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.",

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T1 - Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Jin Won

AU - Choi, Ji Ya

AU - Kim, Sang Su

AU - Kim, Jong Woo

N1 - This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

PY - 2014/7/1

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N2 - The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.

AB - The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.

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KW - Multiferroic properties

KW - Structure

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