Effects of excessive Bi on the structure and the properties of Aurivillius Bi5.25La0.75Fe2Ti3O18 thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Sang Su Kim, Jong Woo Kim

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The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.

Original languageEnglish
Pages (from-to)696-703
Number of pages8
JournalNew Physics: Sae Mulli
Issue number7
Publication statusPublished - 1 Jul 2014

Bibliographical note

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


  • Aurivillius La doped BiFeTiO thin film
  • Chemical solution deposition
  • Multiferroic properties
  • Structure

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