Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films

J. W. Kim, C. M. Raghavan, J. Y. Choi, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

Original languageEnglish
Pages (from-to)1051-1056
Number of pages6
JournalJournal of the Korean Physical Society
Volume66
Issue number7
DOIs
Publication statusPublished - 16 Apr 2015

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Keywords

  • BiFeO<inf>3</inf>
  • Chemical solution deposition
  • Dielectric properties
  • Ferroelectric properties
  • Leakage current

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