The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.
|Number of pages||6|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 16 Apr 2015|
- Chemical solution deposition
- Dielectric properties
- Ferroelectric properties
- Leakage current