Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films

J. W. Kim, C. M. Raghavan, J. Y. Choi, S. S. Kim

Research output: Contribution to journalArticle

Abstract

The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

Original languageEnglish
Pages (from-to)1051-1056
Number of pages6
JournalJournal of the Korean Physical Society
Volume66
Issue number7
DOIs
Publication statusPublished - 16 Apr 2015

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electrical properties
thin films
bismuth
leakage
crystallization
current density
dipoles
nitrogen
atmospheres
microstructure
annealing
defects
oxygen

Keywords

  • BiFeO<inf>3</inf>
  • Chemical solution deposition
  • Dielectric properties
  • Ferroelectric properties
  • Leakage current

Cite this

Kim, J. W. ; Raghavan, C. M. ; Choi, J. Y. ; Kim, S. S. / Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films. In: Journal of the Korean Physical Society. 2015 ; Vol. 66, No. 7. pp. 1051-1056.
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Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films. / Kim, J. W.; Raghavan, C. M.; Choi, J. Y.; Kim, S. S.

In: Journal of the Korean Physical Society, Vol. 66, No. 7, 16.04.2015, p. 1051-1056.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films

AU - Kim, J. W.

AU - Raghavan, C. M.

AU - Choi, J. Y.

AU - Kim, S. S.

PY - 2015/4/16

Y1 - 2015/4/16

N2 - The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

AB - The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

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