TY - JOUR
T1 - Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films
AU - Kim, J. W.
AU - Raghavan, C. M.
AU - Choi, J. Y.
AU - Kim, S. S.
PY - 2015/4/16
Y1 - 2015/4/16
N2 - The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.
AB - The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.
KW - BiFeO<inf>3</inf>
KW - Chemical solution deposition
KW - Dielectric properties
KW - Ferroelectric properties
KW - Leakage current
UR - http://www.scopus.com/inward/record.url?scp=84928342239&partnerID=8YFLogxK
UR - https://link.springer.com/article/10.3938%2Fjkps.66.1051
U2 - 10.3938/jkps.66.1051
DO - 10.3938/jkps.66.1051
M3 - Article
SN - 0374-4884
VL - 66
SP - 1051
EP - 1056
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 7
ER -