Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films

J. W. Kim; C. M. Raghavan; J. Y. Choi; S. S. Kim

doi:10.3938/jkps.66.1051

Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO₃ thin films

J. W. Kim
, C. M. Raghavan
, J. Y. Choi
, S. S. Kim^*

^*Corresponding author for this work

Changwon National University

Research output: Contribution to journal › Article › peer-review

3 Citations (SciVal)

Abstract

The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO₃ thin films are reported. Pure BiFeO₃, (Bi_0.9Ho_0.1)FeO₃, Bi(Fe_0.98Ni_0.02)O_3−δ, and (Bi_0.9Ho_0.1)(Fe_0.98Ni_0.02)O_3−δ thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi_0.9Ho_0.1)(Fe_0.98Ni_0.02)O_3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi_0.9Ho_0.1)(Fe_0.98Ni_0.02)O_3−δ thin film compared to the BiFeO₃ thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

Original language	English
Pages (from-to)	1051-1056
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	66
Issue number	7
DOIs	https://doi.org/10.3938/jkps.66.1051
Publication status	Published - 16 Apr 2015

Keywords

BiFeO<inf>3</inf>
Chemical solution deposition
Dielectric properties
Ferroelectric properties
Leakage current

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10.3938/jkps.66.1051

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title = "Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films",

abstract = "The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.",

keywords = "BiFeO<inf>3</inf>, Chemical solution deposition, Dielectric properties, Ferroelectric properties, Leakage current",

author = "Kim, \{J. W.\} and Raghavan, \{C. M.\} and Choi, \{J. Y.\} and Kim, \{S. S.\}",

year = "2015",

month = apr,

day = "16",

doi = "10.3938/jkps.66.1051",

language = "English",

volume = "66",

pages = "1051--1056",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO3 thin films

AU - Kim, J. W.

AU - Raghavan, C. M.

AU - Choi, J. Y.

AU - Kim, S. S.

PY - 2015/4/16

Y1 - 2015/4/16

N2 - The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

AB - The effects of Ho and Ni doping alone and of co-doping with Ho and Ni on the structural, electrical and ferrolectric properties of BiFeO3 thin films are reported. Pure BiFeO3, (Bi0.9Ho0.1)FeO3, Bi(Fe0.98Ni0.02)O3−δ, and (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. From the experimental results, the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film exhibited superior ferroelectric properties. A lower leakage current density and an improved ferroelectric properties were observed in the (Bi0.9Ho0.1)(Fe0.98Ni0.02)O3−δ thin film compared to the BiFeO3 thin film. The improvements could be explained by the reduction of bismuth and oxygen vacancies, the formation of defect dipoles, and a change in the microstructure.

KW - BiFeO<inf>3</inf>

KW - Chemical solution deposition

KW - Dielectric properties

KW - Ferroelectric properties

KW - Leakage current

UR - https://www.scopus.com/pages/publications/84928342239

UR - https://link.springer.com/article/10.3938%2Fjkps.66.1051

U2 - 10.3938/jkps.66.1051

DO - 10.3938/jkps.66.1051

M3 - Article

SN - 0374-4884

VL - 66

SP - 1051

EP - 1056

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 7

ER -

Effects of Ho- and Ni-doping alone and of co-doping on the structural and the electrical properties of BiFeO₃ thin films

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