Effects of La- and V-doping on structural, electrical and multiferroic properties of Bi6Fe2Ti3O18 thin films

Chinnambedu Murugesan Raghavan; Jin Won Kim; Jong Woo Kim; Sang Su Kim

doi:10.1016/j.ceramint.2014.03.049

Effects of La- and V-doping on structural, electrical and multiferroic properties of Bi₆Fe₂Ti₃O₁₈ thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Jong Woo Kim, Sang Su Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Bi₆Fe₂Ti₃O₁₈ (BFTO), (Bi _5.25La_0.75)Fe₂Ti₃O₁₈ (BLFTO), Bi₆Fe₂(Ti_2.97V_0.03)O _18+δ (BFTVO) and (Bi_5.25La_0.75)Fe ₂(Ti_2.97V_0.03)O_18+δ (BLFTVO) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. The effects of La- and V-doping alone and of co-doping on structural, electrical and multiferroic properties of BFTO thin films were investigated. The thin films were crystallized in Aurivillius orthorhombic structure with no secondary phases and no impurities. Among the thin films, a low leakage current density (1.23×10^-6 A/cm² at 100 kV/cm) and a typical hysteresis loop with a large remnant polarization (2P_r) of 36 μC/cm² and a low coercive field (2E_c) of 146 kV/cm were observed for the BLFTVO thin film. And the thin films showed a weak ferromagnetism at room temperature.

Original language	English
Pages (from-to)	10649-10655
Number of pages	7
Journal	Ceramics International
Volume	40
Issue number	7 PART B
DOIs	https://doi.org/10.1016/j.ceramint.2014.03.049
Publication status	Published - 1 Aug 2014

Keywords

C. Electrical properties
C. Multiferroic properties
D. Bismuth layer-structured ferroelectrics

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10.1016/j.ceramint.2014.03.049

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@article{639f48da8a474a0db2d93512d04aec09,

title = "Effects of La- and V-doping on structural, electrical and multiferroic properties of Bi6Fe2Ti3O18 thin films",

abstract = "Bi6Fe2Ti3O18 (BFTO), (Bi 5.25La0.75)Fe2Ti3O18 (BLFTO), Bi6Fe2(Ti2.97V0.03)O 18+δ (BFTVO) and (Bi5.25La0.75)Fe 2(Ti2.97V0.03)O18+δ (BLFTVO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The effects of La- and V-doping alone and of co-doping on structural, electrical and multiferroic properties of BFTO thin films were investigated. The thin films were crystallized in Aurivillius orthorhombic structure with no secondary phases and no impurities. Among the thin films, a low leakage current density (1.23×10-6 A/cm2 at 100 kV/cm) and a typical hysteresis loop with a large remnant polarization (2Pr) of 36 μC/cm2 and a low coercive field (2Ec) of 146 kV/cm were observed for the BLFTVO thin film. And the thin films showed a weak ferromagnetism at room temperature.",

keywords = "C. Electrical properties, C. Multiferroic properties, D. Bismuth layer-structured ferroelectrics",

author = "Raghavan, {Chinnambedu Murugesan} and Kim, {Jin Won} and Kim, {Jong Woo} and Kim, {Sang Su}",

year = "2014",

month = aug,

day = "1",

doi = "10.1016/j.ceramint.2014.03.049",

language = "English",

volume = "40",

pages = "10649--10655",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier",

number = "7 PART B",

}

TY - JOUR

T1 - Effects of La- and V-doping on structural, electrical and multiferroic properties of Bi6Fe2Ti3O18 thin films

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Jin Won

AU - Kim, Jong Woo

AU - Kim, Sang Su

PY - 2014/8/1

Y1 - 2014/8/1

N2 - Bi6Fe2Ti3O18 (BFTO), (Bi 5.25La0.75)Fe2Ti3O18 (BLFTO), Bi6Fe2(Ti2.97V0.03)O 18+δ (BFTVO) and (Bi5.25La0.75)Fe 2(Ti2.97V0.03)O18+δ (BLFTVO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The effects of La- and V-doping alone and of co-doping on structural, electrical and multiferroic properties of BFTO thin films were investigated. The thin films were crystallized in Aurivillius orthorhombic structure with no secondary phases and no impurities. Among the thin films, a low leakage current density (1.23×10-6 A/cm2 at 100 kV/cm) and a typical hysteresis loop with a large remnant polarization (2Pr) of 36 μC/cm2 and a low coercive field (2Ec) of 146 kV/cm were observed for the BLFTVO thin film. And the thin films showed a weak ferromagnetism at room temperature.

AB - Bi6Fe2Ti3O18 (BFTO), (Bi 5.25La0.75)Fe2Ti3O18 (BLFTO), Bi6Fe2(Ti2.97V0.03)O 18+δ (BFTVO) and (Bi5.25La0.75)Fe 2(Ti2.97V0.03)O18+δ (BLFTVO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The effects of La- and V-doping alone and of co-doping on structural, electrical and multiferroic properties of BFTO thin films were investigated. The thin films were crystallized in Aurivillius orthorhombic structure with no secondary phases and no impurities. Among the thin films, a low leakage current density (1.23×10-6 A/cm2 at 100 kV/cm) and a typical hysteresis loop with a large remnant polarization (2Pr) of 36 μC/cm2 and a low coercive field (2Ec) of 146 kV/cm were observed for the BLFTVO thin film. And the thin films showed a weak ferromagnetism at room temperature.

KW - C. Electrical properties

KW - C. Multiferroic properties

KW - D. Bismuth layer-structured ferroelectrics

UR - http://www.scopus.com/inward/record.url?scp=84900505139&partnerID=8YFLogxK

UR - https://www.sciencedirect.com/science/article/pii/S0272884214003873?via%3Dihub

U2 - 10.1016/j.ceramint.2014.03.049

DO - 10.1016/j.ceramint.2014.03.049

M3 - Article

AN - SCOPUS:84900505139

SN - 0272-8842

VL - 40

SP - 10649

EP - 10655

JO - Ceramics International

JF - Ceramics International

IS - 7 PART B

ER -

Effects of La- and V-doping on structural, electrical and multiferroic properties of Bi₆Fe₂Ti₃O₁₈ thin films

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Keywords

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