TY - JOUR
T1 - Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition
AU - Kim, J. W.
AU - Raghavan, C. M.
AU - Choi, J. Y.
AU - Kim, W. J.
AU - Kim, S. S.
AU - Song, T. K.
PY - 2015/5/15
Y1 - 2015/5/15
N2 - Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-xMnxTi3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2Pr) and the coercive field (2Ec) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.
AB - Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-xMnxTi3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2Pr) and the coercive field (2Ec) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.
KW - Bi<inf>6</inf>Fe<inf>2</inf>Ti<inf>3</inf>O<inf>18</inf> thin film
KW - Bismuth layer-structure
KW - Chemical solution deposition
KW - Ferroelectric properties
KW - Leakage current density
UR - http://www.scopus.com/inward/record.url?scp=84929303046&partnerID=8YFLogxK
UR - https://link.springer.com/article/10.3938%2Fjkps.66.1344
U2 - 10.3938/jkps.66.1344
DO - 10.3938/jkps.66.1344
M3 - Article
SN - 0374-4884
VL - 66
SP - 1344
EP - 1349
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 9
ER -