Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-xMnxTi3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2Pr) and the coercive field (2Ec) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.
- Bi<inf>6</inf>Fe<inf>2</inf>Ti<inf>3</inf>O<inf>18</inf> thin film
- Bismuth layer-structure
- Chemical solution deposition
- Ferroelectric properties
- Leakage current density