Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition

J. W. Kim, C. M. Raghavan, J. Y. Choi, W. J. Kim, S. S. Kim*, T. K. Song

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-xMnxTi3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2Pr) and the coercive field (2Ec) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.

Original languageEnglish
Pages (from-to)1344-1349
Number of pages6
JournalJournal of the Korean Physical Society
Volume66
Issue number9
DOIs
Publication statusPublished - 15 May 2015

Fingerprint

thin films
electrical properties
electric fields
lattice parameters
ions
leakage
stabilization
permittivity
current density
oxygen
polarization

Keywords

  • Bi<inf>6</inf>Fe<inf>2</inf>Ti<inf>3</inf>O<inf>18</inf> thin film
  • Bismuth layer-structure
  • Chemical solution deposition
  • Ferroelectric properties
  • Leakage current density

Cite this

Kim, J. W. ; Raghavan, C. M. ; Choi, J. Y. ; Kim, W. J. ; Kim, S. S. ; Song, T. K. / Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition. In: Journal of the Korean Physical Society. 2015 ; Vol. 66, No. 9. pp. 1344-1349.
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Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition. / Kim, J. W.; Raghavan, C. M.; Choi, J. Y.; Kim, W. J.; Kim, S. S.; Song, T. K.

In: Journal of the Korean Physical Society, Vol. 66, No. 9, 15.05.2015, p. 1344-1349.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition

AU - Kim, J. W.

AU - Raghavan, C. M.

AU - Choi, J. Y.

AU - Kim, W. J.

AU - Kim, S. S.

AU - Song, T. K.

PY - 2015/5/15

Y1 - 2015/5/15

N2 - Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-xMnxTi3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2Pr) and the coercive field (2Ec) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.

AB - Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-xMnxTi3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2Pr) and the coercive field (2Ec) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.

KW - Bi<inf>6</inf>Fe<inf>2</inf>Ti<inf>3</inf>O<inf>18</inf> thin film

KW - Bismuth layer-structure

KW - Chemical solution deposition

KW - Ferroelectric properties

KW - Leakage current density

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