Effects of Nd-doping on the structural, electrical, and multiferroic properties of Bi7Fe3Ti3O21 thin films

Chinnambedu Murugesan Raghavan; Jin Won Kim; Ji Ya Choi; Sang Su Kim

doi:10.3938/NPSM.65.311

Effects of Nd-doping on the structural, electrical, and multiferroic properties of Bi₇Fe₃Ti₃O₂₁ thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Ji Ya Choi, Sang Su Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Aurivillius-phase six-layered Bi₇Fe₃Ti₃O₂₁ (BFTO21) and Nd-doped Bi_6.4Nd_0.6Fe₃Ti₃O₂₁ (BNdFTO21) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method in order to investigate their structural, electrical, and multiferroic properties. Doping the Bi sites of the BFTO21 with Nd-ions led to remarkable improvements in the electrical and the multiferroic properties. The electrical study of the BNdFTO21 thin film showed a low leakage current density of 4.38 × 10^-6 A/cm at an applied electric field of 100 kV/cm, which was about one order of magnitude lower than that of the BFTO21 thin film. The ferroelectric P - E hysteresis loop of the BNdFTO21 thin film exhibited a large remnant polarization (2P_r) of 24 μC/cm² and a low coercive electric field (2E_c) of 154 kV/cm at an applied electric field of 239 kV/cm. Furthermore, the magnetization and the coercive magnetic field that were observed for the BNdFTO21 thin film at room temperature were drastically enhanced compared to those observed for the BFTO21 thin film.

Original language	English
Pages (from-to)	311-316
Number of pages	6
Journal	New Physics: Sae Mulli
Volume	65
Issue number	4
DOIs	https://doi.org/10.3938/NPSM.65.311
Publication status	Published - 1 Apr 2015

Bibliographical note

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Keywords

Chemical solution deposition
Electrical properties
Multiferroic properties
Nd-doped BiFeTiO

Access to Document

10.3938/NPSM.65.311Licence: CC BY-NC 3.0

Effects of Nd-doping on the Structural, Electrical, and Multiferroic Properties
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Final published version, 1.9 MBLicence: CC BY-NC 3.0

Cite this

@article{df55dc2112a54b68a1e293e1925a6e74,

title = "Effects of Nd-doping on the structural, electrical, and multiferroic properties of Bi7Fe3Ti3O21 thin films",

abstract = "Aurivillius-phase six-layered Bi7Fe3Ti3O21 (BFTO21) and Nd-doped Bi6.4Nd0.6Fe3Ti3O21 (BNdFTO21) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method in order to investigate their structural, electrical, and multiferroic properties. Doping the Bi sites of the BFTO21 with Nd-ions led to remarkable improvements in the electrical and the multiferroic properties. The electrical study of the BNdFTO21 thin film showed a low leakage current density of 4.38 × 10-6 A/cm at an applied electric field of 100 kV/cm, which was about one order of magnitude lower than that of the BFTO21 thin film. The ferroelectric P - E hysteresis loop of the BNdFTO21 thin film exhibited a large remnant polarization (2Pr) of 24 μC/cm2 and a low coercive electric field (2Ec) of 154 kV/cm at an applied electric field of 239 kV/cm. Furthermore, the magnetization and the coercive magnetic field that were observed for the BNdFTO21 thin film at room temperature were drastically enhanced compared to those observed for the BFTO21 thin film.",

keywords = "Chemical solution deposition, Electrical properties, Multiferroic properties, Nd-doped BiFeTiO",

author = "Raghavan, {Chinnambedu Murugesan} and Kim, {Jin Won} and Choi, {Ji Ya} and Kim, {Sang Su}",

note = "This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.",

year = "2015",

month = apr,

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doi = "10.3938/NPSM.65.311",

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T1 - Effects of Nd-doping on the structural, electrical, and multiferroic properties of Bi7Fe3Ti3O21 thin films

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Jin Won

AU - Choi, Ji Ya

AU - Kim, Sang Su

N1 - This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Aurivillius-phase six-layered Bi7Fe3Ti3O21 (BFTO21) and Nd-doped Bi6.4Nd0.6Fe3Ti3O21 (BNdFTO21) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method in order to investigate their structural, electrical, and multiferroic properties. Doping the Bi sites of the BFTO21 with Nd-ions led to remarkable improvements in the electrical and the multiferroic properties. The electrical study of the BNdFTO21 thin film showed a low leakage current density of 4.38 × 10-6 A/cm at an applied electric field of 100 kV/cm, which was about one order of magnitude lower than that of the BFTO21 thin film. The ferroelectric P - E hysteresis loop of the BNdFTO21 thin film exhibited a large remnant polarization (2Pr) of 24 μC/cm2 and a low coercive electric field (2Ec) of 154 kV/cm at an applied electric field of 239 kV/cm. Furthermore, the magnetization and the coercive magnetic field that were observed for the BNdFTO21 thin film at room temperature were drastically enhanced compared to those observed for the BFTO21 thin film.

AB - Aurivillius-phase six-layered Bi7Fe3Ti3O21 (BFTO21) and Nd-doped Bi6.4Nd0.6Fe3Ti3O21 (BNdFTO21) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method in order to investigate their structural, electrical, and multiferroic properties. Doping the Bi sites of the BFTO21 with Nd-ions led to remarkable improvements in the electrical and the multiferroic properties. The electrical study of the BNdFTO21 thin film showed a low leakage current density of 4.38 × 10-6 A/cm at an applied electric field of 100 kV/cm, which was about one order of magnitude lower than that of the BFTO21 thin film. The ferroelectric P - E hysteresis loop of the BNdFTO21 thin film exhibited a large remnant polarization (2Pr) of 24 μC/cm2 and a low coercive electric field (2Ec) of 154 kV/cm at an applied electric field of 239 kV/cm. Furthermore, the magnetization and the coercive magnetic field that were observed for the BNdFTO21 thin film at room temperature were drastically enhanced compared to those observed for the BFTO21 thin film.

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