TY - JOUR
T1 - Effects of rare earth metal (Gd and Dy) doping on the structural and electrical properties of K0.5Bi4.5Ti4O15 thin films
AU - Raghavan, Chinnambedu Murugesan
AU - Kim, Jin Won
AU - Choi, Ji Ya
AU - Song, Tae Kwon
AU - Kim, Sang Su
PY - 2015/12/1
Y1 - 2015/12/1
N2 - K0.5Bi4.5Ti4O15 (KBTi), K0.5Bi4Gd0.5Ti4O15 (KBGdTi), and K0.5Bi4Dy0.5Ti4O15 (KBDyTi) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method to investigate the effects of doping on the structural, electrical, and ferroelectric properties. Doping with Gd- and Dy-ions clearly leads to notable improvements in the electrical and ferroelectric properties. Among the thin films, the KBGdTi thin film exhibited a low leakage current density of 1.83×10–9 A/cm2 at 100 kV/cm, a large ferroelectric polarization of 49 μC/cm2, and a low coercive electric field of 398 kV/cm at an applied electric field of 885 kV/cm. A fatigue endurance study showed that the switchable polarization was reduced by only 4% of the initial value after 1.44×1010 switching cycles for the Gd- and Dy-doped KBTi thin films. The improvements in electrical and ferroelectric properties of the Gd- and Dy-doped KBTi thin films were explained on the basis of microstructural change, a decrease in the number of oxygen vacancies, and structural distortion caused by doping with Gd- and Dy-ions.
AB - K0.5Bi4.5Ti4O15 (KBTi), K0.5Bi4Gd0.5Ti4O15 (KBGdTi), and K0.5Bi4Dy0.5Ti4O15 (KBDyTi) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method to investigate the effects of doping on the structural, electrical, and ferroelectric properties. Doping with Gd- and Dy-ions clearly leads to notable improvements in the electrical and ferroelectric properties. Among the thin films, the KBGdTi thin film exhibited a low leakage current density of 1.83×10–9 A/cm2 at 100 kV/cm, a large ferroelectric polarization of 49 μC/cm2, and a low coercive electric field of 398 kV/cm at an applied electric field of 885 kV/cm. A fatigue endurance study showed that the switchable polarization was reduced by only 4% of the initial value after 1.44×1010 switching cycles for the Gd- and Dy-doped KBTi thin films. The improvements in electrical and ferroelectric properties of the Gd- and Dy-doped KBTi thin films were explained on the basis of microstructural change, a decrease in the number of oxygen vacancies, and structural distortion caused by doping with Gd- and Dy-ions.
KW - A. Films
KW - A. Sol–gel processes
KW - C. Electrical properties
KW - C. Ferroelectric properties
UR - http://www.scopus.com/inward/record.url?scp=84940112114&partnerID=8YFLogxK
UR - https://www.sciencedirect.com/science/article/pii/S0272884215016119?via%3Dihub
U2 - 10.1016/j.ceramint.2015.08.086
DO - 10.1016/j.ceramint.2015.08.086
M3 - Article
AN - SCOPUS:84940112114
SN - 0272-8842
VL - 41
SP - 15138
EP - 15144
JO - Ceramics International
JF - Ceramics International
IS - 10, Part B
ER -