Abstract
External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.
Original language | English |
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Article number | 1323 |
Journal | Materials |
Volume | 10 |
Issue number | 11 |
Early online date | 18 Nov 2017 |
DOIs | |
Publication status | Published - 18 Nov 2017 |
Bibliographical note
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).Keywords
- Active region non-uniformity
- Extended defects
- InGaNgreen LEDs
- Internal quantum efficiency
- Light extraction efficiency
- Modeling
- Temperature-dependent electroluminescence