Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

N.S. Daghestani, G.S. Sokolovskii, N.E. Bazieva, A.V. Tolmatchev, E.U. Rafailov

Research output: Contribution to journalArticle

Abstract

In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

Original languageEnglish
Article number095025
Number of pages5
JournalSemiconductor Science and Technology
Volume24
Issue number9
DOIs
Publication statusPublished - 29 Aug 2009

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Nanocrystalline silicon
Conversion efficiency
Thermal conductivity
Crystalline materials
Radiation
silicon
Substrates
radiation
thermal conductivity
output
gallium arsenide

Bibliographical note

M1 - Article

Keywords

  • TEMPERATURE-GROWN GAAS
  • GENERATION

Cite this

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Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer. / Daghestani, N.S.; Sokolovskii, G.S.; Bazieva, N.E.; Tolmatchev, A.V.; Rafailov, E.U.

In: Semiconductor Science and Technology, Vol. 24, No. 9, 095025, 29.08.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

AU - Daghestani, N.S.

AU - Sokolovskii, G.S.

AU - Bazieva, N.E.

AU - Tolmatchev, A.V.

AU - Rafailov, E.U.

N1 - M1 - Article

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AB - In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

KW - TEMPERATURE-GROWN GAAS

KW - GENERATION

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