Electroabsorption and electrorefraction in an InAs quantum-dot waveguide modulator

D. B. Malins, A. Gomez-Iglesias, E. U. Rafailov, W. Sibbett, A. Miller

Research output: Contribution to journalArticlepeer-review

Abstract

Optical transmission measurements are reported in the 1.3-mum region in an InAs quantum-dot (QD) waveguide modulator using a supercontinuum generator. A quantum-confined Stark shift of 15 nm was demonstrated in a five-layer QD stack with a field of 270 KV/cm. The electrically induced change in absorption has been measured and the change in refractive index (up to 0.001) has been estimated via the Kramers-Kronig relations. This highlights the potential of such a device as an electroabsorption or electrooptic phase modulator at telecommunication wavelengths.
Original languageEnglish
Pages (from-to)1118 - 1120
JournalIEEE Photonics Technology Letters
Volume19
Issue number15
DOIs
Publication statusPublished - Aug 2007

Fingerprint

Dive into the research topics of 'Electroabsorption and electrorefraction in an InAs quantum-dot waveguide modulator'. Together they form a unique fingerprint.

Cite this