EML based on side-wall grating and identical epitaxial layer scheme

Lianping Hou; Mingming Tan; Mohsin Haji; Iain Eddie; John H. Marsh

doi:10.1109/LPT.2013.2261809

EML based on side-wall grating and identical epitaxial layer scheme

Lianping Hou, Mingming Tan, Mohsin Haji, Iain Eddie, John H. Marsh

Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is-2V. The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.

Original language	English
Article number	6514055
Pages (from-to)	1169-1172
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2013.2261809
Publication status	Published - 14 Jun 2013

Keywords

Distributed feedback (DFB) laser
electroabsorption modulator (EAM)
electroabsorption modulator integrated DBF laser (EML)
high extinction ratio (ER)
integrated laser modulator (ILM)
low drive voltage

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10.1109/LPT.2013.2261809

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@article{c52f5ffc7f6647678944ae6c7ca2350c,

title = "EML based on side-wall grating and identical epitaxial layer scheme",

abstract = "We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is-2V. The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.",

keywords = "Distributed feedback (DFB) laser, electroabsorption modulator (EAM), electroabsorption modulator integrated DBF laser (EML), high extinction ratio (ER), integrated laser modulator (ILM), low drive voltage",

author = "Lianping Hou and Mingming Tan and Mohsin Haji and Iain Eddie and Marsh, {John H.}",

year = "2013",

month = jun,

day = "14",

doi = "10.1109/LPT.2013.2261809",

language = "English",

volume = "25",

pages = "1169--1172",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "12",

}

TY - JOUR

T1 - EML based on side-wall grating and identical epitaxial layer scheme

AU - Hou, Lianping

AU - Tan, Mingming

AU - Haji, Mohsin

AU - Eddie, Iain

AU - Marsh, John H.

PY - 2013/6/14

Y1 - 2013/6/14

N2 - We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is-2V. The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.

AB - We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is-2V. The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.

KW - Distributed feedback (DFB) laser

KW - electroabsorption modulator (EAM)

KW - electroabsorption modulator integrated DBF laser (EML)

KW - high extinction ratio (ER)

KW - integrated laser modulator (ILM)

KW - low drive voltage

UR - http://www.scopus.com/inward/record.url?scp=84878799043&partnerID=8YFLogxK

U2 - 10.1109/LPT.2013.2261809

DO - 10.1109/LPT.2013.2261809

M3 - Article

AN - SCOPUS:84878799043

SN - 1041-1135

VL - 25

SP - 1169

EP - 1172

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

M1 - 6514055

ER -

EML based on side-wall grating and identical epitaxial layer scheme

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