Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Aye S. M. Kyaw; Ben C. King; Adam F. McKenzie; Zijun Bian; Daehyun Kim; Neil D. Gerrard; Kenichi Nishi; Keizo Takemasa; Mitsuru Sugawara; David T. D. Childs; Calum H. Hill; Richard J. E. Taylor; Richard A. Hogg

doi:10.1063/5.0202834

Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Aye S. M. Kyaw, Ben C. King, Adam F. McKenzie, Zijun Bian, Daehyun Kim, Neil D. Gerrard, Kenichi Nishi, Keizo Takemasa, Mitsuru Sugawara, David T. D. Childs, Calum H. Hill, Richard J. E. Taylor, Richard A. Hogg

Research output: Contribution to journal › Article › peer-review

Abstract

Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

Original language	English
Article number	221101-5
Number of pages	6
Journal	Applied Physics Letters
Volume	124
Issue number	22
DOIs	https://doi.org/10.1063/5.0202834
Publication status	Published - 27 May 2024

Bibliographical note

This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Data Access Statement

The data that support the findings of this study are available from
the corresponding author upon reasonable request.

Keywords

Epitaxy
Photonic crystals
Quantum dots
Lasers
Semiconductors

Access to Document

10.1063/5.0202834

Epitaxially regrown quantum dot photonic crystal surface emitting lasers
This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Final published version, 2.14 MBLicence: CC BY 4.0

Cite this

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abstract = "Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.",

keywords = "Epitaxy, Photonic crystals, Quantum dots, Lasers, Semiconductors",

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note = "This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.",

year = "2024",

month = may,

day = "27",

doi = "10.1063/5.0202834",

language = "English",

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T1 - Epitaxially regrown quantum dot photonic crystal surface emitting lasers

AU - Kyaw, Aye S. M.

AU - King, Ben C.

AU - McKenzie, Adam F.

AU - Bian, Zijun

AU - Kim, Daehyun

AU - Gerrard, Neil D.

AU - Nishi, Kenichi

AU - Takemasa, Keizo

AU - Sugawara, Mitsuru

AU - Childs, David T. D.

AU - Hill, Calum H.

AU - Taylor, Richard J. E.

AU - Hogg, Richard A.

N1 - This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

PY - 2024/5/27

Y1 - 2024/5/27

N2 - Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

AB - Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

KW - Epitaxy

KW - Photonic crystals

KW - Quantum dots

KW - Lasers

KW - Semiconductors

UR - https://pubs.aip.org/aip/apl/article/124/22/221101/3295181/Epitaxially-regrown-quantum-dot-photonic-crystal

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U2 - 10.1063/5.0202834

DO - 10.1063/5.0202834

M3 - Article

SN - 0003-6951

VL - 124

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221101-5

ER -

Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Abstract

Bibliographical note

Data Access Statement

Keywords

Access to Document

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