Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Aye S. M. Kyaw; Ben C. King; Adam F. McKenzie; Zijun Bian; Daehyun Kim; Neil D. Gerrard; Kenichi Nishi; Keizo Takemasa; Mitsuru Sugawara; David T. D. Childs; Calum H. Hill; Richard J. E. Taylor; Richard A. Hogg

doi:10.1063/5.0202834

Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Aye S. M. Kyaw, Ben C. King, Adam F. McKenzie, Zijun Bian, Daehyun Kim, Neil D. Gerrard, Kenichi Nishi, Keizo Takemasa, Mitsuru Sugawara, David T. D. Childs, Calum H. Hill, Richard J. E. Taylor, Richard A. Hogg

James Watt School of Engineering, University of Glasgow 1 , Glasgow G12 8QQ, United Kingdom
III-V Epi Ltd., 11 The Square 2 , University Avenue, Glasgow G12 8QQ, United Kingdom
QD Laser Inc 3 ., Minamiwataridacho, Kawaski-ku, Kawasaki, Kanagawa 210-0855, Japan
Vector Photonics Ltd 4 ., 2317 Maryhill Rd., Glasgow G20 0SP, United Kingdom

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

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Abstract

Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

Original language	English
Article number	221101-5
Number of pages	6
Journal	Applied Physics Letters
Volume	124
Issue number	22
DOIs	https://doi.org/10.1063/5.0202834
Publication status	Published - 27 May 2024

Bibliographical note

This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Data Access Statement

The data that support the findings of this study are available from
the corresponding author upon reasonable request.

Funding

This work was supported by Innovate UK/Eurostars Project “BLOODLINE” (Grant No. 79455). B.C.K. is grateful for the support provided by the Engineering and Physical Sciences Research Council (RCUK Grant No. EP/L015323/1). A.F.M. is grateful for the support of the Royal Commission for the Exhibition of 1851 through an Industrial Fellowship (Grant No. IF195/2018)

Funders	Funder number
Innovate UK
Engineering and Physical Sciences Research Council
Eurostars	79455
Eurostars
Research Councils UK	EP/L015323/1
Research Councils UK
Royal Commission for the Exhibition of 1851	IF195/2018
Royal Commission for the Exhibition of 1851

Keywords

Epitaxy
Photonic crystals
Quantum dots
Lasers
Semiconductors

Access to Document

10.1063/5.0202834

Epitaxially regrown quantum dot photonic crystal surface emitting lasers
This is an open access article distributed under the terms of the Creative Commons CC BY license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Final published version, 2.14 MBLicence: CC BY 4.0

Cite this

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AU - Kyaw, Aye S. M.

AU - King, Ben C.

AU - McKenzie, Adam F.

AU - Bian, Zijun

AU - Kim, Daehyun

AU - Gerrard, Neil D.

AU - Nishi, Kenichi

AU - Takemasa, Keizo

AU - Sugawara, Mitsuru

AU - Childs, David T. D.

AU - Hill, Calum H.

AU - Taylor, Richard J. E.

AU - Hogg, Richard A.

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PY - 2024/5/27

Y1 - 2024/5/27

N2 - Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

AB - Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

KW - Epitaxy

KW - Photonic crystals

KW - Quantum dots

KW - Lasers

KW - Semiconductors

UR - https://pubs.aip.org/aip/apl/article/124/22/221101/3295181/Epitaxially-regrown-quantum-dot-photonic-crystal

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JF - Applied Physics Letters

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Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Abstract

Bibliographical note

Data Access Statement

Funding

Keywords

Access to Document

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