Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

R Mottahedeh, S K Haywood, D A Pattison, P N Kean, I Bennion, M Hopkinson, D Prescott, M. Pate

    Research output: Chapter in Book/Published conference outputConference publication

    Original languageEnglish
    Title of host publication9th IEEE Lasers and Electro-Optics Society Annual Meeting
    PagesThQ4
    Publication statusPublished - Nov 1996
    Event9th IEEE Lasers and Electro-Optics Society Annual Meeting - Boston, United States
    Duration: 18 Nov 199621 Nov 1996

    Conference

    Conference9th IEEE Lasers and Electro-Optics Society Annual Meeting
    Country/TerritoryUnited States
    CityBoston
    Period18/11/9621/11/96

    Keywords

    • III-V semiconductors
    • X-ray diffraction
    • excitons
    • gallium arsenide
    • indium compounds
    • k.p calculations
    • molecular beam epitaxial growth
    • optical saturable absorption
    • semiconductor heterojunctions
    • semiconductor quantum wells

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