Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

R Mottahedeh, S K Haywood, D A Pattison, P N Kean, I Bennion, M Hopkinson, D Prescott, M. Pate

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication9th IEEE Lasers and Electro-Optics Society Annual Meeting
PagesThQ4
Publication statusPublished - Nov 1996
Event9th IEEE Lasers and Electro-Optics Society Annual Meeting - Boston, United States
Duration: 18 Nov 199621 Nov 1996

Conference

Conference9th IEEE Lasers and Electro-Optics Society Annual Meeting
CountryUnited States
CityBoston
Period18/11/9621/11/96

Keywords

  • III-V semiconductors
  • X-ray diffraction
  • excitons
  • gallium arsenide
  • indium compounds
  • k.p calculations
  • molecular beam epitaxial growth
  • optical saturable absorption
  • semiconductor heterojunctions
  • semiconductor quantum wells

Cite this

Mottahedeh, R., Haywood, S. K., Pattison, D. A., Kean, P. N., Bennion, I., Hopkinson, M., ... Pate, M. (1996). Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. In 9th IEEE Lasers and Electro-Optics Society Annual Meeting (pp. ThQ4)
Mottahedeh, R ; Haywood, S K ; Pattison, D A ; Kean, P N ; Bennion, I ; Hopkinson, M ; Prescott, D ; Pate, M. / Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. 9th IEEE Lasers and Electro-Optics Society Annual Meeting. 1996. pp. ThQ4
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title = "Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW",
keywords = "III-V semiconductors, X-ray diffraction, excitons, gallium arsenide, indium compounds, k.p calculations, molecular beam epitaxial growth, optical saturable absorption, semiconductor heterojunctions, semiconductor quantum wells",
author = "R Mottahedeh and Haywood, {S K} and Pattison, {D A} and Kean, {P N} and I Bennion and M Hopkinson and D Prescott and M. Pate",
year = "1996",
month = "11",
language = "English",
pages = "ThQ4",
booktitle = "9th IEEE Lasers and Electro-Optics Society Annual Meeting",

}

Mottahedeh, R, Haywood, SK, Pattison, DA, Kean, PN, Bennion, I, Hopkinson, M, Prescott, D & Pate, M 1996, Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. in 9th IEEE Lasers and Electro-Optics Society Annual Meeting. pp. ThQ4, 9th IEEE Lasers and Electro-Optics Society Annual Meeting, Boston, United States, 18/11/96.

Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. / Mottahedeh, R; Haywood, S K; Pattison, D A; Kean, P N; Bennion, I; Hopkinson, M; Prescott, D; Pate, M.

9th IEEE Lasers and Electro-Optics Society Annual Meeting. 1996. p. ThQ4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

AU - Mottahedeh, R

AU - Haywood, S K

AU - Pattison, D A

AU - Kean, P N

AU - Bennion, I

AU - Hopkinson, M

AU - Prescott, D

AU - Pate, M.

PY - 1996/11

Y1 - 1996/11

KW - III-V semiconductors

KW - X-ray diffraction

KW - excitons

KW - gallium arsenide

KW - indium compounds

KW - k.p calculations

KW - molecular beam epitaxial growth

KW - optical saturable absorption

KW - semiconductor heterojunctions

KW - semiconductor quantum wells

M3 - Conference contribution

SP - ThQ4

BT - 9th IEEE Lasers and Electro-Optics Society Annual Meeting

ER -

Mottahedeh R, Haywood SK, Pattison DA, Kean PN, Bennion I, Hopkinson M et al. Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. In 9th IEEE Lasers and Electro-Optics Society Annual Meeting. 1996. p. ThQ4