Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

R Mottahedeh, S K Haywood, D A Pattison, P N Kean, I Bennion, M Hopkinson, D Prescott, M. Pate

Research output: Chapter in Book/Report/Conference proceedingConference publication

Original languageEnglish
Title of host publication9th IEEE Lasers and Electro-Optics Society Annual Meeting
PagesThQ4
Publication statusPublished - Nov 1996
Event9th IEEE Lasers and Electro-Optics Society Annual Meeting - Boston, United States
Duration: 18 Nov 199621 Nov 1996

Conference

Conference9th IEEE Lasers and Electro-Optics Society Annual Meeting
CountryUnited States
CityBoston
Period18/11/9621/11/96

Keywords

  • III-V semiconductors
  • X-ray diffraction
  • excitons
  • gallium arsenide
  • indium compounds
  • k.p calculations
  • molecular beam epitaxial growth
  • optical saturable absorption
  • semiconductor heterojunctions
  • semiconductor quantum wells

Cite this

Mottahedeh, R., Haywood, S. K., Pattison, D. A., Kean, P. N., Bennion, I., Hopkinson, M., Prescott, D., & Pate, M. (1996). Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. In 9th IEEE Lasers and Electro-Optics Society Annual Meeting (pp. ThQ4)