@inproceedings{075738d4c90a4bcf9fb7649d2245b2b2,
title = "Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW",
keywords = "III-V semiconductors, X-ray diffraction, excitons, gallium arsenide, indium compounds, k.p calculations, molecular beam epitaxial growth, optical saturable absorption, semiconductor heterojunctions, semiconductor quantum wells",
author = "R Mottahedeh and Haywood, \{S K\} and Pattison, \{D A\} and Kean, \{P N\} and I Bennion and M Hopkinson and D Prescott and M. Pate",
year = "1996",
month = nov,
language = "English",
pages = "ThQ4",
booktitle = "9th IEEE Lasers and Electro-Optics Society Annual Meeting",
note = "9th IEEE Lasers and Electro-Optics Society Annual Meeting ; Conference date: 18-11-1996 Through 21-11-1996",
}