The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.
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The following article appeared in Kavanagh, K, Saveliev, I, Blumin, M, Ruda, H & Swadener, G 2012, 'Faster radial strain relaxation in InAs-GaAs core-shell heterowires', Journal of applied physics, vol 111, no. 4. and may be found at http://jap.aip.org/resource/1/japiau/v111/i4/p044301_s1
- III-V semiconductors
Kavanagh, K. L., Saveliev, I., Blumin, M., Ruda, H. E., & Swadener, G. (2012). Faster radial strain relaxation in InAs-GaAs core-shell heterowires. Journal of Applied Physics, 111(4), . https://doi.org/10.1063/1.3684964