Faster radial strain relaxation in InAs-GaAs core-shell heterowires

K.L. Kavanagh, I. Saveliev, M. Blumin, H.E. Ruda, G. Swadener

Research output: Contribution to journalArticle

Abstract

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.
Original languageEnglish
Article number044301
JournalJournal of Applied Physics
Volume111
Issue number4
DOIs
Publication statusPublished - 17 Feb 2012

Bibliographical note

Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Kavanagh, K, Saveliev, I, Blumin, M, Ruda, H & Swadener, G 2012, 'Faster radial strain relaxation in InAs-GaAs core-shell heterowires', Journal of applied physics, vol 111, no. 4. and may be found at http://jap.aip.org/resource/1/japiau/v111/i4/p044301_s1

Keywords

  • strain
  • nanowires
  • dislocations
  • III-V semiconductors

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