Ferroelectric properties of Ce3+- doped Aurivillius K0.5Bi4.5Ti4O15 thin films

Min Hwan Kwak; Chinnambedu Murugesan Raghavan; Sang Su Kim; Won Jeong Kim

doi:10.3938/jkps.71.413

Ferroelectric properties of Ce³⁺- doped Aurivillius K_0.5Bi_4.5Ti₄O₁₅ thin films

Min Hwan Kwak
, Chinnambedu Murugesan Raghavan
, Sang Su Kim
, Won Jeong Kim^*

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Changwon Moonsung University
Changwon National University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of Ce³⁺-ion doping on the structural, electrical and ferroelectric properties of the Aurivillius K_0.5Bi_4.5Ti₄O₁₅ thin films are reported. For the purpose of this study, K_0.5Bi_4.5Ti₄O₁₅ and K_0.5Bi_4.0Ce_0.5Ti₄O₁₅ thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by using chemical solution deposition method. Formation of the Aurivillius structure was confirmed through X-ray diffraction and Raman scattering studies. From the experimental results, tremendous improvements in the electrical and the ferroelectric properties were observed for the K_0.5Bi_4.0Ce_0.5Ti₄O₁₅ thin film. The ferroelectric polarization-electric field (P-E) hysteresis loops study showed a largely enhanced remnant polarization (2P_r), with a value of 52.8 μC/cm² for the K_0.5Bi_4.0Ce_0.5Ti₄O₁₅ thin film measured at an applied electric field of 595 kV/cm. Furthermore, a low leakage current density value of 1.38×10⁻⁸ A/cm² was measured at an applied electric field of 100 kV/cm for the K_0.5Bi_4.0Ce_0.5Ti₄O₁₅ thin film.

Original language	English
Pages (from-to)	413-418
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	71
Issue number	7
Early online date	27 Sept 2017
DOIs	https://doi.org/10.3938/jkps.71.413
Publication status	Published - 1 Oct 2017

Funding

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0030058). W. J. Kim appreciates the partial financial support from Changwon National University (2017).

Keywords

Electrical properties
Ferroelectricity
Microstructure
Thin films
X-ray diffraction

Access to Document

10.3938/jkps.71.413

Cite this

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title = "Ferroelectric properties of Ce3+- doped Aurivillius K0.5Bi4.5Ti4O15 thin films",

abstract = "The effect of Ce3+-ion doping on the structural, electrical and ferroelectric properties of the Aurivillius K0.5Bi4.5Ti4O15 thin films are reported. For the purpose of this study, K0.5Bi4.5Ti4O15 and K0.5Bi4.0Ce0.5Ti4O15 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using chemical solution deposition method. Formation of the Aurivillius structure was confirmed through X-ray diffraction and Raman scattering studies. From the experimental results, tremendous improvements in the electrical and the ferroelectric properties were observed for the K0.5Bi4.0Ce0.5Ti4O15 thin film. The ferroelectric polarization-electric field (P-E) hysteresis loops study showed a largely enhanced remnant polarization (2Pr), with a value of 52.8 μC/cm2 for the K0.5Bi4.0Ce0.5Ti4O15 thin film measured at an applied electric field of 595 kV/cm. Furthermore, a low leakage current density value of 1.38×10−8 A/cm2 was measured at an applied electric field of 100 kV/cm for the K0.5Bi4.0Ce0.5Ti4O15 thin film.",

keywords = "Electrical properties, Ferroelectricity, Microstructure, Thin films, X-ray diffraction",

author = "Kwak, \{Min Hwan\} and Raghavan, \{Chinnambedu Murugesan\} and Kim, \{Sang Su\} and Kim, \{Won Jeong\}",

year = "2017",

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doi = "10.3938/jkps.71.413",

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T1 - Ferroelectric properties of Ce3+- doped Aurivillius K0.5Bi4.5Ti4O15 thin films

AU - Kwak, Min Hwan

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Sang Su

AU - Kim, Won Jeong

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The effect of Ce3+-ion doping on the structural, electrical and ferroelectric properties of the Aurivillius K0.5Bi4.5Ti4O15 thin films are reported. For the purpose of this study, K0.5Bi4.5Ti4O15 and K0.5Bi4.0Ce0.5Ti4O15 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using chemical solution deposition method. Formation of the Aurivillius structure was confirmed through X-ray diffraction and Raman scattering studies. From the experimental results, tremendous improvements in the electrical and the ferroelectric properties were observed for the K0.5Bi4.0Ce0.5Ti4O15 thin film. The ferroelectric polarization-electric field (P-E) hysteresis loops study showed a largely enhanced remnant polarization (2Pr), with a value of 52.8 μC/cm2 for the K0.5Bi4.0Ce0.5Ti4O15 thin film measured at an applied electric field of 595 kV/cm. Furthermore, a low leakage current density value of 1.38×10−8 A/cm2 was measured at an applied electric field of 100 kV/cm for the K0.5Bi4.0Ce0.5Ti4O15 thin film.

AB - The effect of Ce3+-ion doping on the structural, electrical and ferroelectric properties of the Aurivillius K0.5Bi4.5Ti4O15 thin films are reported. For the purpose of this study, K0.5Bi4.5Ti4O15 and K0.5Bi4.0Ce0.5Ti4O15 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using chemical solution deposition method. Formation of the Aurivillius structure was confirmed through X-ray diffraction and Raman scattering studies. From the experimental results, tremendous improvements in the electrical and the ferroelectric properties were observed for the K0.5Bi4.0Ce0.5Ti4O15 thin film. The ferroelectric polarization-electric field (P-E) hysteresis loops study showed a largely enhanced remnant polarization (2Pr), with a value of 52.8 μC/cm2 for the K0.5Bi4.0Ce0.5Ti4O15 thin film measured at an applied electric field of 595 kV/cm. Furthermore, a low leakage current density value of 1.38×10−8 A/cm2 was measured at an applied electric field of 100 kV/cm for the K0.5Bi4.0Ce0.5Ti4O15 thin film.

KW - Electrical properties

KW - Ferroelectricity

KW - Microstructure

KW - Thin films

KW - X-ray diffraction

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