TY - GEN
T1 - Gain and phase dynamics in an InAs/GaAs quantum dot amplifier at 1300 nm
AU - Koos, C.
AU - Vallaitis, T.
AU - Bolles, B. A.
AU - Bonk, R.
AU - Freude, W.
AU - Laemmlin, M.
AU - Meuer, C.
AU - Bimberg, D.
AU - Ellis, A.
AU - Leuthold, J.
PY - 2007
Y1 - 2007
N2 - Featuring sub-10 ps carrier recovery times, self assembled quantum dot (QD) semiconductor optical amplifiers (SOA) are promising devices for all-optical signal processing. In particular, InAs/GaAs QD SOAs exhibit low sensitivity with respect to temperature and show potential for uncooled operation at 1300 nm.
AB - Featuring sub-10 ps carrier recovery times, self assembled quantum dot (QD) semiconductor optical amplifiers (SOA) are promising devices for all-optical signal processing. In particular, InAs/GaAs QD SOAs exhibit low sensitivity with respect to temperature and show potential for uncooled operation at 1300 nm.
UR - http://www.scopus.com/inward/record.url?scp=84899118261&partnerID=8YFLogxK
UR - https://www.osapublishing.org/abstract.cfm?URI=CLEO_Europe-2007-CI3_1
M3 - Conference publication
AN - SCOPUS:84899118261
SN - 1-4244-931-4
T3 - Optics InfoBase Conference Papers
BT - The European Conference on Lasers and Electro-Optics 2007
T2 - The European Conference on Lasers and Electro-Optics, CLEO_Europe 2007
Y2 - 17 June 2007 through 17 June 2007
ER -