GaN-based distributed feedback laser diodes for optical communications

Steffan Gwyn; Scott Watson; Shaun Viola; Giovanni Giuliano; Thomas J. Slight; Szymon Stanczyk; Szymon Grzanka; Amit Yadav; Kevin E. Docherty; Edik Rafailov; Piotr Perlin; Stephen P. Najda; Mike Leszczynski; Anthony E. Kelly

doi:10.1117/12.2527074

GaN-based distributed feedback laser diodes for optical communications

Steffan Gwyn, Scott Watson, Shaun Viola, Giovanni Giuliano, Thomas J. Slight, Szymon Stanczyk, Szymon Grzanka, Amit Yadav, Kevin E. Docherty, Edik Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczynski, Anthony E. Kelly

Research output: Contribution to journal › Conference article › peer-review

Abstract

Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr⁺) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems.

Original language	English
Article number	112070O
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11207
DOIs	https://doi.org/10.1117/12.2527074
Publication status	Published - 3 Oct 2019
Event	4th International Conference on Applications of Optics and Photonics, AOP 2019 - Lisbon, Portugal Duration: 31 May 2019 → 4 Jun 2019

Bibliographical note

Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

distributed feedback lasers
filtered communications
Gallium nitride
optical communications

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10.1117/12.2527074

GaN-based distributed feedback laser diodes for optical communications
Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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Gwyn, S., Watson, S., Viola, S., Giuliano, G., Slight, T. J., Stanczyk, S., Grzanka, S., Yadav, A., Docherty, K. E., Rafailov, E., Perlin, P., Najda, S. P., Leszczynski, M., & Kelly, A. E. (2019). GaN-based distributed feedback laser diodes for optical communications. Proceedings of SPIE - The International Society for Optical Engineering, 11207, Article 112070O. https://doi.org/10.1117/12.2527074

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title = "GaN-based distributed feedback laser diodes for optical communications",

abstract = "Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr+) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems.",

keywords = "distributed feedback lasers, filtered communications, Gallium nitride, optical communications",

author = "Steffan Gwyn and Scott Watson and Shaun Viola and Giovanni Giuliano and Slight, {Thomas J.} and Szymon Stanczyk and Szymon Grzanka and Amit Yadav and Docherty, {Kevin E.} and Edik Rafailov and Piotr Perlin and Najda, {Stephen P.} and Mike Leszczynski and Kelly, {Anthony E.}",

note = "Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. ; 4th International Conference on Applications of Optics and Photonics, AOP 2019 ; Conference date: 31-05-2019 Through 04-06-2019",

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Gwyn, S, Watson, S, Viola, S, Giuliano, G, Slight, TJ, Stanczyk, S, Grzanka, S, Yadav, A, Docherty, KE, Rafailov, E, Perlin, P, Najda, SP, Leszczynski, M & Kelly, AE 2019, 'GaN-based distributed feedback laser diodes for optical communications', Proceedings of SPIE - The International Society for Optical Engineering, vol. 11207, 112070O. https://doi.org/10.1117/12.2527074

TY - JOUR

T1 - GaN-based distributed feedback laser diodes for optical communications

AU - Gwyn, Steffan

AU - Watson, Scott

AU - Viola, Shaun

AU - Giuliano, Giovanni

AU - Slight, Thomas J.

AU - Stanczyk, Szymon

AU - Grzanka, Szymon

AU - Yadav, Amit

AU - Docherty, Kevin E.

AU - Rafailov, Edik

AU - Perlin, Piotr

AU - Najda, Stephen P.

AU - Leszczynski, Mike

AU - Kelly, Anthony E.

N1 - Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2019/10/3

Y1 - 2019/10/3

N2 - Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr+) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems.

AB - Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr+) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems.

KW - distributed feedback lasers

KW - filtered communications

KW - Gallium nitride

KW - optical communications

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UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11207/2527074/GaN-based-distributed-feedback-laser-diodes-for-optical-communications/10.1117/12.2527074.full?SSO=1

U2 - 10.1117/12.2527074

DO - 10.1117/12.2527074

M3 - Conference article

AN - SCOPUS:85074267074

SN - 0277-786X

VL - 11207

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 112070O

T2 - 4th International Conference on Applications of Optics and Photonics, AOP 2019

Y2 - 31 May 2019 through 4 June 2019

ER -

GaN-based distributed feedback laser diodes for optical communications

Abstract

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Keywords

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