H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98 B0.02 /Si structures

Lin Shao, Yuan Lin, J.G. Swadener, J.K. Lee, Q.X. Jia, Y.Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T.L. Alford, J.W. Mayer, Peng Chen, S.S. Lau

Research output: Contribution to journalArticlepeer-review

Abstract

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

Original languageEnglish
Article number021901
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
Publication statusPublished - 2006

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