H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98                     B0.02        /Si structures

Lin Shao; Yuan Lin; J.G. Swadener; J.K. Lee; Q.X. Jia; Y.Q. Wang; M. Nastasi; Phillip E. Thompson; N. David Theodore; T.L. Alford; J.W. Mayer; Peng Chen; S.S. Lau

doi:10.1063/1.2163992

H-induced platelet and crack formation in hydrogenated epitaxial Si/Si_0.98 B_0.02 /Si structures

Lin Shao, Yuan Lin, J.G. Swadener, J.K. Lee, Q.X. Jia, Y.Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T.L. Alford, J.W. Mayer, Peng Chen, S.S. Lau

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Abstract

An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si_0.98B_0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si_0.98B_0.02 layer. For hydrogenated Si containing a 130nm thick Si_0.98B_0.02layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si_0.98B_0.02layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

Original language	English
Article number	021901
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.2163992
Publication status	Published - 2006

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Shao, L., Lin, Y., Swadener, J. G., Lee, J. K., Jia, Q. X., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., Alford, T. L., Mayer, J. W., Chen, P., & Lau, S. S. (2006). H-induced platelet and crack formation in hydrogenated epitaxial Si/Si_0.98 B_0.02 /Si structures. Applied Physics Letters, 88(2), Article 021901. https://doi.org/10.1063/1.2163992

@article{edeabe7fe62347359620708d7889b1de,

title = "H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98 B0.02 /Si structures",

abstract = "An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.",

author = "Lin Shao and Yuan Lin and J.G. Swadener and J.K. Lee and Q.X. Jia and Y.Q. Wang and M. Nastasi and Thompson, {Phillip E.} and Theodore, {N. David} and T.L. Alford and J.W. Mayer and Peng Chen and S.S. Lau",

year = "2006",

doi = "10.1063/1.2163992",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98 B0.02 /Si structures

AU - Shao, Lin

AU - Lin, Yuan

AU - Swadener, J.G.

AU - Lee, J.K.

AU - Jia, Q.X.

AU - Wang, Y.Q.

AU - Nastasi, M.

AU - Thompson, Phillip E.

AU - Theodore, N. David

AU - Alford, T.L.

AU - Mayer, J.W.

AU - Chen, Peng

AU - Lau, S.S.

PY - 2006

Y1 - 2006

N2 - An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

AB - An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxialSi/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation.

UR - http://www.scopus.com/inward/record.url?scp=30844433075&partnerID=8YFLogxK

UR - https://aip.scitation.org/doi/10.1063/1.2163992

U2 - 10.1063/1.2163992

DO - 10.1063/1.2163992

M3 - Article

AN - SCOPUS:30844433075

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021901

ER -

H-induced platelet and crack formation in hydrogenated epitaxial Si/Si_0.98 B_0.02 /Si structures

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