High-power picosecond pulse generation from a gain-switched violet diode laser

Youfang Hu, Mykhaylo Dubov, Igor Khrushchev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Generation of picosecond pulses with a peak power in excess of 7W and a duration of 24ps from a gain-switched InGaN diode laser is demonstrated for the first time.
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics (CLEO)
PublisherOptical Society of America
Volume2
ISBN (Print)1-55752-777-6
DOIs
Publication statusPublished - 16 May 2004
EventConference on Lasers and Electro-Optics (CLEO) and International Quantum Electronics Conference and Photonic Applications Systems Technologies - San Francisco, CA, United States
Duration: 16 May 200421 May 2004

Publication series

NameTrends in optics and photonics series [Technical digest]
PublisherOptical Society of America
Volume96

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO) and International Quantum Electronics Conference and Photonic Applications Systems Technologies
Abbreviated titleCLEO 2004/ IQEC 2004
CountryUnited States
CitySan Francisco, CA
Period16/05/0421/05/04

Fingerprint

picosecond pulses
semiconductor lasers

Keywords

  • III-V semiconductors
  • gallium compounds
  • indium compounds
  • optical pulse generation
  • semiconductor lasers
  • 24 ps
  • 7 W
  • InGaN
  • gain-switched violet diode laser
  • picosecond pulse generation

Cite this

Hu, Y., Dubov, M., & Khrushchev, I. (2004). High-power picosecond pulse generation from a gain-switched violet diode laser. In Conference on Lasers and Electro-Optics (CLEO) (Vol. 2). [CThW2] (Trends in optics and photonics series [Technical digest]; Vol. 96). Optical Society of America. https://doi.org/10.1109/CLEO.2004.1360811
Hu, Youfang ; Dubov, Mykhaylo ; Khrushchev, Igor. / High-power picosecond pulse generation from a gain-switched violet diode laser. Conference on Lasers and Electro-Optics (CLEO). Vol. 2 Optical Society of America, 2004. (Trends in optics and photonics series [Technical digest]).
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title = "High-power picosecond pulse generation from a gain-switched violet diode laser",
abstract = "Generation of picosecond pulses with a peak power in excess of 7W and a duration of 24ps from a gain-switched InGaN diode laser is demonstrated for the first time.",
keywords = "III-V semiconductors, gallium compounds, indium compounds, optical pulse generation, semiconductor lasers, 24 ps, 7 W, InGaN, gain-switched violet diode laser, picosecond pulse generation",
author = "Youfang Hu and Mykhaylo Dubov and Igor Khrushchev",
year = "2004",
month = "5",
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language = "English",
isbn = "1-55752-777-6",
volume = "2",
series = "Trends in optics and photonics series [Technical digest]",
publisher = "Optical Society of America",
booktitle = "Conference on Lasers and Electro-Optics (CLEO)",

}

Hu, Y, Dubov, M & Khrushchev, I 2004, High-power picosecond pulse generation from a gain-switched violet diode laser. in Conference on Lasers and Electro-Optics (CLEO). vol. 2, CThW2, Trends in optics and photonics series [Technical digest], vol. 96, Optical Society of America, Conference on Lasers and Electro-Optics (CLEO) and International Quantum Electronics Conference and Photonic Applications Systems Technologies, San Francisco, CA, United States, 16/05/04. https://doi.org/10.1109/CLEO.2004.1360811

High-power picosecond pulse generation from a gain-switched violet diode laser. / Hu, Youfang; Dubov, Mykhaylo; Khrushchev, Igor.

Conference on Lasers and Electro-Optics (CLEO). Vol. 2 Optical Society of America, 2004. CThW2 (Trends in optics and photonics series [Technical digest]; Vol. 96).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - High-power picosecond pulse generation from a gain-switched violet diode laser

AU - Hu, Youfang

AU - Dubov, Mykhaylo

AU - Khrushchev, Igor

PY - 2004/5/16

Y1 - 2004/5/16

N2 - Generation of picosecond pulses with a peak power in excess of 7W and a duration of 24ps from a gain-switched InGaN diode laser is demonstrated for the first time.

AB - Generation of picosecond pulses with a peak power in excess of 7W and a duration of 24ps from a gain-switched InGaN diode laser is demonstrated for the first time.

KW - III-V semiconductors

KW - gallium compounds

KW - indium compounds

KW - optical pulse generation

KW - semiconductor lasers

KW - 24 ps

KW - 7 W

KW - InGaN

KW - gain-switched violet diode laser

KW - picosecond pulse generation

UR - http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2004-CThW2

U2 - 10.1109/CLEO.2004.1360811

DO - 10.1109/CLEO.2004.1360811

M3 - Conference contribution

SN - 1-55752-777-6

VL - 2

T3 - Trends in optics and photonics series [Technical digest]

BT - Conference on Lasers and Electro-Optics (CLEO)

PB - Optical Society of America

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Hu Y, Dubov M, Khrushchev I. High-power picosecond pulse generation from a gain-switched violet diode laser. In Conference on Lasers and Electro-Optics (CLEO). Vol. 2. Optical Society of America. 2004. CThW2. (Trends in optics and photonics series [Technical digest]). https://doi.org/10.1109/CLEO.2004.1360811