High-power quantum dot semiconductor disk lasers

Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik U. Rafailov, Oleg Okhotnikov

Research output: Contribution to journalConference articlepeer-review


The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.
Original languageEnglish
Article number824207
JournalProceedings of SPIE - International Society for Optical Engineering
Publication statusPublished - 14 Apr 2012
EventVertical External Cavity Surface Emitting Lasers (VECSELs) II - San Francisco, United States
Duration: 21 Jan 201226 Jan 2012


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