High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma

C.J. Tang, A.J.S. Fernandes, Marco Granada, J.P. Leitão, S. Pereira, X.F. Jiang, J.L. Pinto, H. Ye

Research output: Contribution to journalSpecial issue

Abstract

In this work, we investigate the impact of minute amounts of pure nitrogen addition into conventional methane/hydrogen mixtures on the growth characteristics of nanocrystalline diamond (NCD) films by microwave plasma assisted chemical vapour deposition (MPCVD), under high power conditions. The NCD films were produced from a gas mixture of 4% CH4/H2 with two different concentrations of N2 additive and microwave power ranging from 3.0 kW to 4.0 kW, while keeping all the other operating parameters constant. The morphology, grain size, microstructure and texture of the resulting NCD films were characterized by using scanning electron microscope (SEM), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques. N2 addition was found to be the main parameter responsible for the formation and for the key change in the growth characteristics of NCD films under the employed conditions. Growth rates ranging from 5.4 μm/h up to 9.6 μm/h were achieved for the NCD films, much higher than those usually reported in the literature. The enhancing factor of nitrogen addition on NCD growth rate was obtained by comparing with the growth rate of large-grained microcrystalline diamond films grown without nitrogen and discussed by comparing with that of single crystal diamond through theoretical work in the literature. This achievement on NCD growth rate makes the technology interesting for industrial applications where fast coating of large substrates is highly desirable.

Original languageEnglish
Pages (from-to)342-346
Number of pages5
JournalVacuum
Volume122
Issue numberPart B
Early online date28 Mar 2015
DOIs
Publication statusPublished - Dec 2015
Event13th European Vacuum Conference EVC13 - Aveiro, Joint meeting with 7th European Topical Conference on Hard Coatings and 9th Iberian Vacuum Meeting, Portugal
Duration: 8 Sep 201412 Feb 2016

Fingerprint

Diamond films
Methane
hydrogen plasma
diamond films
Hydrogen
Nitrogen
methane
Microwaves
Plasmas
microwaves
nitrogen
Diamond
Diamonds
diamonds
Gas mixtures
Industrial applications
gas mixtures
Raman spectroscopy
coating
Chemical vapor deposition

Bibliographical note

13th European Vacuum Conference Joint meeting with 7th European Topical Conference on Hard Coatings and 9th Iberian Vacuum Meeting

Keywords

  • high growth rate
  • high power MPCVD
  • nanocrystalline diamond films
  • nitrogen induced growth rate enhancement
  • nitrogen/methane/hydrogen plasma

Cite this

Tang, C. J., Fernandes, A. J. S., Granada, M., Leitão, J. P., Pereira, S., Jiang, X. F., ... Ye, H. (2015). High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma. Vacuum, 122(Part B), 342-346. https://doi.org/10.1016/j.vacuum.2015.03.021
Tang, C.J. ; Fernandes, A.J.S. ; Granada, Marco ; Leitão, J.P. ; Pereira, S. ; Jiang, X.F. ; Pinto, J.L. ; Ye, H. / High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma. In: Vacuum. 2015 ; Vol. 122, No. Part B. pp. 342-346.
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Tang, CJ, Fernandes, AJS, Granada, M, Leitão, JP, Pereira, S, Jiang, XF, Pinto, JL & Ye, H 2015, 'High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma', Vacuum, vol. 122, no. Part B, pp. 342-346. https://doi.org/10.1016/j.vacuum.2015.03.021

High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma. / Tang, C.J.; Fernandes, A.J.S.; Granada, Marco; Leitão, J.P.; Pereira, S.; Jiang, X.F.; Pinto, J.L.; Ye, H.

In: Vacuum, Vol. 122, No. Part B, 12.2015, p. 342-346.

Research output: Contribution to journalSpecial issue

TY - JOUR

T1 - High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma

AU - Tang, C.J.

AU - Fernandes, A.J.S.

AU - Granada, Marco

AU - Leitão, J.P.

AU - Pereira, S.

AU - Jiang, X.F.

AU - Pinto, J.L.

AU - Ye, H.

N1 - 13th European Vacuum Conference Joint meeting with 7th European Topical Conference on Hard Coatings and 9th Iberian Vacuum Meeting

PY - 2015/12

Y1 - 2015/12

N2 - In this work, we investigate the impact of minute amounts of pure nitrogen addition into conventional methane/hydrogen mixtures on the growth characteristics of nanocrystalline diamond (NCD) films by microwave plasma assisted chemical vapour deposition (MPCVD), under high power conditions. The NCD films were produced from a gas mixture of 4% CH4/H2 with two different concentrations of N2 additive and microwave power ranging from 3.0 kW to 4.0 kW, while keeping all the other operating parameters constant. The morphology, grain size, microstructure and texture of the resulting NCD films were characterized by using scanning electron microscope (SEM), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques. N2 addition was found to be the main parameter responsible for the formation and for the key change in the growth characteristics of NCD films under the employed conditions. Growth rates ranging from 5.4 μm/h up to 9.6 μm/h were achieved for the NCD films, much higher than those usually reported in the literature. The enhancing factor of nitrogen addition on NCD growth rate was obtained by comparing with the growth rate of large-grained microcrystalline diamond films grown without nitrogen and discussed by comparing with that of single crystal diamond through theoretical work in the literature. This achievement on NCD growth rate makes the technology interesting for industrial applications where fast coating of large substrates is highly desirable.

AB - In this work, we investigate the impact of minute amounts of pure nitrogen addition into conventional methane/hydrogen mixtures on the growth characteristics of nanocrystalline diamond (NCD) films by microwave plasma assisted chemical vapour deposition (MPCVD), under high power conditions. The NCD films were produced from a gas mixture of 4% CH4/H2 with two different concentrations of N2 additive and microwave power ranging from 3.0 kW to 4.0 kW, while keeping all the other operating parameters constant. The morphology, grain size, microstructure and texture of the resulting NCD films were characterized by using scanning electron microscope (SEM), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques. N2 addition was found to be the main parameter responsible for the formation and for the key change in the growth characteristics of NCD films under the employed conditions. Growth rates ranging from 5.4 μm/h up to 9.6 μm/h were achieved for the NCD films, much higher than those usually reported in the literature. The enhancing factor of nitrogen addition on NCD growth rate was obtained by comparing with the growth rate of large-grained microcrystalline diamond films grown without nitrogen and discussed by comparing with that of single crystal diamond through theoretical work in the literature. This achievement on NCD growth rate makes the technology interesting for industrial applications where fast coating of large substrates is highly desirable.

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KW - nanocrystalline diamond films

KW - nitrogen induced growth rate enhancement

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