Highly Efficient Quantum Dot-Based Photoconductive THz Materials and Devices

E. U. Rafailov; R. Leyman; D. Carnegie; N. Bazieva

doi:10.1117/12.2023673

Highly Efficient Quantum Dot-Based Photoconductive THz Materials and Devices

E. U. Rafailov, R. Leyman, D. Carnegie, N. Bazieva

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, ≤850 nm and ≤1300 nm.

Original language	English
Article number	88460I
Journal	Proceedings of SPIE - International Society for Optical Engineering
Volume	8846
DOIs	https://doi.org/10.1117/12.2023673
Publication status	Published - 24 Sept 2013

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title = "Highly Efficient Quantum Dot-Based Photoconductive THz Materials and Devices",

abstract = "We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, ≤850 nm and ≤1300 nm.",

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AU - Rafailov, E. U.

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

PY - 2013/9/24

Y1 - 2013/9/24

N2 - We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, ≤850 nm and ≤1300 nm.

AB - We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, ≤850 nm and ≤1300 nm.

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DO - 10.1117/12.2023673

M3 - Conference article

SN - 0277-786X

VL - 8846

JO - Proceedings of SPIE - International Society for Optical Engineering

JF - Proceedings of SPIE - International Society for Optical Engineering

M1 - 88460I

ER -

Highly Efficient Quantum Dot-Based Photoconductive THz Materials and Devices

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