Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

U. Bielecka, P. Lutsyk, M. Nyk, K. Janus, M. Samoc, W. Bartkowiak, S. Nespurek

Research output: Contribution to journalArticle

Abstract

Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×10−4 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.
Original languageEnglish
Pages (from-to)288–297
JournalMaterials Science- Poland
Volume31
Issue number2
DOIs
Publication statusPublished - 20 Apr 2013

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Organic field effect transistors
Semiconductor quantum dots
Field effect transistors
Charge transfer
Hole mobility
Carrier mobility
Hybrid materials
Charge carriers
Surface-Active Agents
poly(3-hexylthiophene)
Ligands

Cite this

Bielecka, U., Lutsyk, P., Nyk, M., Janus, K., Samoc, M., Bartkowiak, W., & Nespurek, S. (2013). Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots. Materials Science- Poland, 31(2), 288–297. https://doi.org/10.2478/s13536-013-0101-0
Bielecka, U. ; Lutsyk, P. ; Nyk, M. ; Janus, K. ; Samoc, M. ; Bartkowiak, W. ; Nespurek, S. / Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots. In: Materials Science- Poland. 2013 ; Vol. 31, No. 2. pp. 288–297.
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Bielecka, U, Lutsyk, P, Nyk, M, Janus, K, Samoc, M, Bartkowiak, W & Nespurek, S 2013, 'Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots', Materials Science- Poland, vol. 31, no. 2, pp. 288–297. https://doi.org/10.2478/s13536-013-0101-0

Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots. / Bielecka, U.; Lutsyk, P.; Nyk, M.; Janus, K.; Samoc, M.; Bartkowiak, W.; Nespurek, S.

In: Materials Science- Poland, Vol. 31, No. 2, 20.04.2013, p. 288–297.

Research output: Contribution to journalArticle

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AU - Janus, K.

AU - Samoc, M.

AU - Bartkowiak, W.

AU - Nespurek, S.

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AB - Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×10−4 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.

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Bielecka U, Lutsyk P, Nyk M, Janus K, Samoc M, Bartkowiak W et al. Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots. Materials Science- Poland. 2013 Apr 20;31(2):288–297. https://doi.org/10.2478/s13536-013-0101-0