TY - JOUR
T1 - Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots
AU - Bielecka, U.
AU - Lutsyk, P.
AU - Nyk, M.
AU - Janus, K.
AU - Samoc, M.
AU - Bartkowiak, W.
AU - Nespurek, S.
PY - 2013/4/20
Y1 - 2013/4/20
N2 - Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×10−4 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.
AB - Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×10−4 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84885233713&partnerID=MN8TOARS
UR - https://link.springer.com/article/10.2478%2Fs13536-013-0101-0
U2 - 10.2478/s13536-013-0101-0
DO - 10.2478/s13536-013-0101-0
M3 - Article
SN - 2083-134X
VL - 31
SP - 288
EP - 297
JO - Materials Science- Poland
JF - Materials Science- Poland
IS - 2
ER -