Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

G.S. Sokolovskii; V.V. Dudelev; E.D. Kolykhalova; K.K. Soboleva; A.G. Deryagin; I.I. Novikov; M.V. Maximov; A.E. Zhukov; V.M. Ustinov; V.I. Kuchinskii; W. Sibbett; E.U. Rafailov; E.A. Viktorov; T. Erneux

doi:10.1117/12.2078746

Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

G.S. Sokolovskii, V.V. Dudelev, E.D. Kolykhalova, K.K. Soboleva, A.G. Deryagin, I.I. Novikov, M.V. Maximov, A.E. Zhukov, V.M. Ustinov, V.I. Kuchinskii, W. Sibbett, E.U. Rafailov, E.A. Viktorov, T. Erneux

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

Original language	English
Title of host publication	Physics and simulation of optoelectronic devices XXIII
Editors	Bernd Witzigmann, Marek Osiński, Fritz Henneberger, Yasuhiko Arakawa
Publisher	SPIE
Number of pages	6
ISBN (Print)	978-1-6284-1447-9
DOIs	https://doi.org/10.1117/12.2078746
Publication status	Published - Mar 2015
Event	Physics and simulation of optoelectronic devices XXIII - San Francisco, United States Duration: 9 Feb 2015 → 12 Feb 2015

Publication series

Name	SPIE proceedings
Publisher	SPIE
Volume	9357
ISSN (Print)	0277-786X

Conference

Conference	Physics and simulation of optoelectronic devices XXIII
Country/Territory	United States
City	San Francisco
Period	9/02/15 → 12/02/15

Bibliographical note

G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; K. K. Soboleva; A. G. Deryagin; I. I. Novikov; M. V. Maximov; A. E. Zhukov; V. M. Ustinov; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov; E. A. Viktorov and T. Erneux, "Impact of the carrier relaxation paths on two-state operation in quantum dot lasers", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570K (March 16, 2015).

Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

DOI: http://dx.doi.org/10.1117/12.2078746

Keywords

laser diodes
qunatum dots
relaxation oscillations
two-state operation

Access to Document

10.1117/12.2078746

Carrier relaxation paths on two-state operation
G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; K. K. Soboleva; A. G. Deryagin; I. I. Novikov; M. V. Maximov; A. E. Zhukov; V. M. Ustinov; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov; E. A. Viktorov and T. Erneux, "Impact of the carrier relaxation paths on two-state operation in quantum dot lasers", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570K (March 16, 2015). Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2078746
Final published version, 292 KB

http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2208492

Cite this

Sokolovskii, G. S., Dudelev, V. V., Kolykhalova, E. D., Soboleva, K. K., Deryagin, A. G., Novikov, I. I., Maximov, M. V., Zhukov, A. E., Ustinov, V. M., Kuchinskii, V. I., Sibbett, W., Rafailov, E. U., Viktorov, E. A., & Erneux, T. (2015). Impact of the carrier relaxation paths on two-state operation in quantum dot lasers. In B. Witzigmann, M. Osiński, F. Henneberger, & Y. Arakawa (Eds.), Physics and simulation of optoelectronic devices XXIII Article 93570K (SPIE proceedings; Vol. 9357). SPIE. https://doi.org/10.1117/12.2078746

@inproceedings{b75f6103434e4c89827e3bff501d3870,

title = "Impact of the carrier relaxation paths on two-state operation in quantum dot lasers",

abstract = "We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.",

keywords = "laser diodes, qunatum dots, relaxation oscillations, two-state operation",

author = "G.S. Sokolovskii and V.V. Dudelev and E.D. Kolykhalova and K.K. Soboleva and A.G. Deryagin and I.I. Novikov and M.V. Maximov and A.E. Zhukov and V.M. Ustinov and V.I. Kuchinskii and W. Sibbett and E.U. Rafailov and E.A. Viktorov and T. Erneux",

note = "G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; K. K. Soboleva; A. G. Deryagin; I. I. Novikov; M. V. Maximov; A. E. Zhukov; V. M. Ustinov; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov; E. A. Viktorov and T. Erneux, {"}Impact of the carrier relaxation paths on two-state operation in quantum dot lasers{"}, Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570K (March 16, 2015). Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2078746; Physics and simulation of optoelectronic devices XXIII ; Conference date: 09-02-2015 Through 12-02-2015",

year = "2015",

month = mar,

doi = "10.1117/12.2078746",

language = "English",

isbn = "978-1-6284-1447-9",

series = "SPIE proceedings",

publisher = "SPIE",

editor = "Bernd Witzigmann and Marek Osi{\'n}ski and Fritz Henneberger and Yasuhiko Arakawa",

booktitle = "Physics and simulation of optoelectronic devices XXIII",

address = "United States",

}

Sokolovskii, GS, Dudelev, VV, Kolykhalova, ED, Soboleva, KK, Deryagin, AG, Novikov, II, Maximov, MV, Zhukov, AE, Ustinov, VM, Kuchinskii, VI, Sibbett, W, Rafailov, EU, Viktorov, EA & Erneux, T 2015, Impact of the carrier relaxation paths on two-state operation in quantum dot lasers. in B Witzigmann, M Osiński, F Henneberger & Y Arakawa (eds), Physics and simulation of optoelectronic devices XXIII., 93570K, SPIE proceedings, vol. 9357, SPIE, Physics and simulation of optoelectronic devices XXIII, San Francisco, United States, 9/02/15. https://doi.org/10.1117/12.2078746

Impact of the carrier relaxation paths on two-state operation in quantum dot lasers. / Sokolovskii, G.S.; Dudelev, V.V.; Kolykhalova, E.D. et al.
Physics and simulation of optoelectronic devices XXIII. ed. / Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa. SPIE, 2015. 93570K (SPIE proceedings; Vol. 9357).

Research output: Chapter in Book/Published conference output › Conference publication

TY - GEN

T1 - Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

AU - Sokolovskii, G.S.

AU - Dudelev, V.V.

AU - Kolykhalova, E.D.

AU - Soboleva, K.K.

AU - Deryagin, A.G.

AU - Novikov, I.I.

AU - Maximov, M.V.

AU - Zhukov, A.E.

AU - Ustinov, V.M.

AU - Kuchinskii, V.I.

AU - Sibbett, W.

AU - Rafailov, E.U.

AU - Viktorov, E.A.

AU - Erneux, T.

N1 - G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; K. K. Soboleva; A. G. Deryagin; I. I. Novikov; M. V. Maximov; A. E. Zhukov; V. M. Ustinov; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov; E. A. Viktorov and T. Erneux, "Impact of the carrier relaxation paths on two-state operation in quantum dot lasers", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570K (March 16, 2015). Copyright 2015 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI: http://dx.doi.org/10.1117/12.2078746

PY - 2015/3

Y1 - 2015/3

N2 - We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

AB - We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

KW - laser diodes

KW - qunatum dots

KW - relaxation oscillations

KW - two-state operation

UR - http://www.scopus.com/inward/record.url?scp=84947757985&partnerID=8YFLogxK

U2 - 10.1117/12.2078746

DO - 10.1117/12.2078746

M3 - Conference publication

AN - SCOPUS:84947757985

SN - 978-1-6284-1447-9

T3 - SPIE proceedings

BT - Physics and simulation of optoelectronic devices XXIII

A2 - Witzigmann, Bernd

A2 - Osiński, Marek

A2 - Henneberger, Fritz

A2 - Arakawa, Yasuhiko

PB - SPIE

T2 - Physics and simulation of optoelectronic devices XXIII

Y2 - 9 February 2015 through 12 February 2015

ER -

Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this